BCW61C,215

Product Overview

Category

BCW61C,215 belongs to the category of NPN Silicon RF Transistor.

Use

It is commonly used for high-frequency amplifier applications in various electronic devices.

Characteristics

• High frequency capability
• Low noise figure
• High transition frequency

Package

The BCW61C,215 comes in a SOT23 package.

Essence

This transistor is essential for amplifying high-frequency signals in electronic circuits.

Packaging/Quantity

The BCW61C,215 is typically packaged in reels with a quantity of 3000 units per reel.

Specifications

• Collector-Base Voltage (VCBO): 45 V
• Collector-Emitter Voltage (VCEO): 45 V
• Emitter-Base Voltage (VEBO): 5 V
• Collector Current (IC): 100 mA
• Power Dissipation (Ptot): 250 mW
• Transition Frequency (fT): 6 GHz
• Noise Figure (NF): 1.3 dB

Detailed Pin Configuration

The BCW61C,215 has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

• High-frequency amplification
• Low noise performance
• Suitable for RF applications

Advantages

• High transition frequency
• Low noise figure
• Small package size

Disadvantages

• Limited collector current compared to some other transistors
• Lower power dissipation compared to some alternatives

Working Principles

The BCW61C,215 operates based on the principles of NPN bipolar junction transistors, providing amplification of high-frequency signals by controlling the flow of current between its terminals.

Detailed Application Field Plans

The BCW61C,215 is widely used in: - Radio frequency amplifiers - Oscillators - Signal generators - RF mixers

Detailed and Complete Alternative Models

Some alternative models to BCW61C,215 include: - BC847C,235 - BC846B,215 - BC857C,115

In conclusion, the BCW61C,215 NPN Silicon RF Transistor offers high-frequency amplification with low noise performance, making it suitable for various electronic applications such as radio frequency amplifiers, oscillators, and signal generators.

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