BCP53-10,135

Product Overview

Category: Transistor
Use: Amplification and Switching
Characteristics: High current gain, low voltage drop
Package: SOT223
Essence: NPN Bipolar Junction Transistor
Packaging/Quantity: Tape & Reel, 3000 pieces

Specifications

• Collector-Base Voltage (VCBO): 45V
• Collector-Emitter Voltage (VCEO): 45V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 500mA
• Power Dissipation (Ptot): 1.25W
• Transition Frequency (ft): 250MHz
• Operating Temperature Range: -65°C to 150°C

Detailed Pin Configuration

• Base (B)
• Collector (C)
• Emitter (E)

Functional Features

• High current gain
• Low saturation voltage
• Fast switching speed

Advantages

• Suitable for high-speed switching applications
• Small form factor
• Low power consumption

Disadvantages

• Limited maximum collector current compared to other transistors
• Limited power dissipation capability

Working Principles

The BCP53-10,135 operates as an NPN transistor, where a small current at the base terminal controls a larger current flow between the collector and emitter terminals. This allows it to amplify or switch electronic signals.

Detailed Application Field Plans

1. Audio Amplification: Used in audio amplifiers due to its high current gain and low voltage drop characteristics.
2. Switching Circuits: Employed in various electronic switches and relays due to its fast switching speed.

Detailed and Complete Alternative Models

1. BCP56-16,115: Similar specifications with higher collector current capability.
2. BC847BS,115: General-purpose NPN transistor with comparable characteristics.

This comprehensive entry provides a detailed overview of the BCP53-10,135 transistor, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.