BC859BW,115

Product Category: Transistor

Basic Information Overview: - Category: Bipolar (BJT) Transistor - Use: Amplification and switching of electronic signals - Characteristics: Small signal NPN transistor, low power, high voltage - Package: SOT-323 - Essence: Small-signal general-purpose amplifier - Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications: - Collector-Base Voltage (VCBO): 30V - Collector-Emitter Voltage (VCEO): 25V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 100mA - Power Dissipation (Ptot): 250mW - Transition Frequency (fT): 250MHz - Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration: - Pin 1 (Emitter): Emitter terminal - Pin 2 (Base): Base terminal - Pin 3 (Collector): Collector terminal

Functional Features: - High current gain - Low noise - Complementary PNP type available (BC849BW,115)

Advantages: - Small package size - Wide operating temperature range - High transition frequency

Disadvantages: - Limited collector current compared to some alternatives - Relatively low power dissipation capability

Working Principles: The BC859BW,115 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans: - Audio amplification circuits - Signal processing circuits - Switching applications in portable electronics

Detailed and Complete Alternative Models: - BC847BW,115 - BC848BW,115 - BC850BW,115

This comprehensive entry provides an in-depth understanding of the BC859BW,115 transistor, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.