MPF200TL-FCSG536E

Product Overview

• Category: Electronic Component
• Use: Amplifier Transistor
• Characteristics: High power, low noise, small size
• Package: TO-220
• Essence: NPN Silicon Transistor
• Packaging/Quantity: Tape and Reel, 1000 units per reel

Specifications

• Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 60V
• Current - Collector (Ic) (Max): 5A
• Power - Max: 40W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C

Detailed Pin Configuration

The MPF200TL-FCSG536E transistor has three pins:

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High power amplification capabilities
• Low noise operation
• Small form factor for space-constrained applications
• Suitable for a wide range of electronic circuits

Advantages

• High power handling capacity
• Low noise output
• Compact size allows for versatile integration
• Wide operating temperature range

Disadvantages

• Limited voltage breakdown capability compared to some other transistors
• Moderate DC current gain at higher collector currents

Working Principles

The MPF200TL-FCSG536E is an NPN silicon transistor that operates based on the principles of bipolar junction transistors. It amplifies electrical signals by controlling the flow of current between its collector and emitter terminals.

Detailed Application Field Plans

The MPF200TL-FCSG536E transistor finds applications in various electronic circuits, including:

1. Audio amplifiers
2. Power supplies
3. Motor control circuits
4. RF amplification systems
5. Switching circuits

Detailed and Complete Alternative Models

1. BC547B: NPN Transistor, 45V, 100mA, TO-92 package
2. 2N3904: NPN Transistor, 40V, 200mA, TO-92 package
3. MPSA42: NPN Darlington Transistor, 300V, 500mA, TO-92 package
4. 2SC945: NPN Transistor, 50V, 150mA, TO-92 package
5. TIP31C: NPN Power Transistor, 100V, 3A, TO-220 package

These alternative models offer similar functionality and can be used as substitutes for the MPF200TL-FCSG536E transistor in various applications.

Note: The content provided above is a sample entry and may not reflect actual specifications or details of the MPF200TL-FCSG536E transistor.