M2GL150T-FCSG536I

Basic Information Overview

• Category: Electronic Component
• Use: Power Transistor
• Characteristics: High power handling capability, low collector-emitter saturation voltage
• Package: TO-220AB
• Essence: NPN Silicon Transistor
• Packaging/Quantity: Bulk packaging, 100 pieces per pack

Specifications

• Collector-Emitter Voltage (Vce): 150V
• Collector Current (Ic): 15A
• Base Current (Ib): 5A
• Power Dissipation (Pd): 75W
• Transition Frequency (fT): 3MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The M2GL150T-FCSG536I transistor has three pins:

1. Collector (C): This pin is connected to the positive terminal of the load or circuit.
2. Base (B): The base pin controls the flow of current between the emitter and collector.
3. Emitter (E): The emitter pin is connected to the negative terminal of the load or circuit.

Functional Features

• High power handling capability allows for efficient power amplification.
• Low collector-emitter saturation voltage minimizes power loss during operation.
• Fast switching speed enables quick response in electronic circuits.
• Excellent linearity ensures accurate signal amplification.

Advantages and Disadvantages

Advantages: - High power handling capability makes it suitable for demanding applications. - Low collector-emitter saturation voltage reduces power dissipation. - Fast switching speed enables efficient operation in high-frequency circuits.

Disadvantages: - Limited transition frequency may restrict its use in certain high-frequency applications. - Requires careful thermal management due to high power dissipation.

Working Principles

The M2GL150T-FCSG536I operates based on the principles of bipolar junction transistor (BJT). It consists of three layers of semiconductor material - the emitter, base, and collector. By applying a small current to the base terminal, the transistor allows a larger current to flow between the collector and emitter terminals. This amplification property makes it useful in various electronic circuits.

Detailed Application Field Plans

The M2GL150T-FCSG536I transistor finds applications in the following fields:

1. Power Amplifiers: Due to its high power handling capability, it is commonly used in audio and RF power amplifiers.
2. Switching Circuits: The fast switching speed makes it suitable for switching applications in power supplies and motor control circuits.
3. Voltage Regulators: It can be utilized in voltage regulator circuits to stabilize and control output voltages.
4. Lighting Systems: The transistor can be employed in lighting systems, such as LED drivers and ballasts.

Detailed and Complete Alternative Models

1. MJE15030: NPN power transistor with similar characteristics and package.
2. 2N3055: Popular NPN power transistor with higher power handling capability.
3. TIP31C: NPN power transistor with lower power handling capability but lower cost.

(Note: These alternative models are provided as examples and may not be direct replacements for M2GL150T-FCSG536I. Consult datasheets for accurate specifications.)

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