JAN2N930

Product Overview

Use

It is commonly used in RF (radio frequency) applications, particularly in amplifiers and oscillators.

Characteristics

High-frequency capability
Low noise figure
Good gain characteristics

Package

The JAN2N930 is typically available in a metal can package.

Essence

This transistor is essential for high-frequency signal amplification and generation.

Packaging/Quantity

The JAN2N930 is usually packaged individually or in small quantities suitable for prototyping and small-scale production.

Specifications

Maximum Collector-Base Voltage: 30V
Maximum Collector Current: 50mA
Power Dissipation: 300mW
Transition Frequency: 800MHz
Noise Figure: 3dB

Detailed Pin Configuration

The JAN2N930 has three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

High-frequency amplification
Low noise performance
Suitable for RF oscillator circuits

Advantages

High transition frequency
Low noise figure
Good gain characteristics

Disadvantages

Limited maximum collector current
Relatively low power dissipation rating

Working Principles

The JAN2N930 operates based on the principles of bipolar junction transistors, providing amplification and signal processing at high frequencies.

Detailed Application Field Plans

The JAN2N930 is widely used in the following applications: - RF amplifiers - RF oscillators - Communication systems - Radar systems

Detailed and Complete Alternative Models

Some alternative models to the JAN2N930 include: - 2N2222 - 2N3904 - 2N4401

In conclusion, the JAN2N930 is a crucial component in high-frequency RF circuits, offering excellent amplification and noise performance. Its specifications and functional features make it well-suited for various communication and radar systems.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací JAN2N930 v technických řešeních

What is the JAN2N930 transistor used for?
- The JAN2N930 transistor is commonly used in high-frequency amplifier and oscillator circuits.
What are the key specifications of the JAN2N930 transistor?
- The JAN2N930 is a silicon NPN transistor with a maximum collector current of 50 mA, a maximum power dissipation of 300 mW, and a transition frequency of 200 MHz.
Can the JAN2N930 be used in low-power applications?
- Yes, the JAN2N930 can be used in low-power applications due to its low power dissipation and small signal characteristics.
What are the typical operating conditions for the JAN2N930 transistor?
- The JAN2N930 transistor typically operates at a collector-emitter voltage (Vce) of 15 V and a collector current (Ic) of 10 mA.
Is the JAN2N930 suitable for high-frequency applications?
- Yes, the JAN2N930 is well-suited for high-frequency applications such as RF amplifiers and oscillators due to its transition frequency of 200 MHz.
What are the temperature considerations for the JAN2N930 transistor?
- The JAN2N930 has a maximum operating junction temperature of 200°C, making it suitable for a wide range of operating conditions.
Are there any common alternative transistors to the JAN2N930?
- Common alternatives to the JAN2N930 include the 2N2222, 2N3904, and BC547 transistors, which have similar characteristics and can be used in similar applications.
Can the JAN2N930 be used in audio amplifier circuits?
- While the JAN2N930 is primarily designed for high-frequency applications, it can also be used in low-power audio amplifier circuits with appropriate biasing and configuration.
What are the typical gain characteristics of the JAN2N930 transistor?
- The JAN2N930 transistor typically has a forward current transfer ratio (hfe) of around 100 at low frequencies, making it suitable for amplification purposes.
Where can I find detailed application notes for using the JAN2N930 in technical solutions?
- Detailed application notes for the JAN2N930 can be found in semiconductor datasheets, application manuals, and technical reference guides provided by semiconductor manufacturers and distributors.