JAN1N6316/TR

Product Overview

• Category: Semiconductor Diode
• Use: Rectification and voltage regulation
• Characteristics: High reliability, low forward voltage drop, fast switching speed
• Package: DO-41 axial leaded package
• Essence: Efficient rectification and voltage regulation
• Packaging/Quantity: Available in reels of 1000 units

Specifications

• Forward Voltage Drop: 0.7V
• Reverse Voltage: 200V
• Forward Current: 1A
• Reverse Recovery Time: 50ns
• Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The JAN1N6316/TR diode has a simple two-pin configuration with the anode connected to one end and the cathode to the other end.

Functional Features

• Efficient rectification of AC to DC
• Fast switching speed for high-frequency applications
• Low forward voltage drop for minimal power loss

Advantages and Disadvantages

Advantages: - High reliability - Fast switching speed - Low forward voltage drop

Disadvantages: - Limited reverse voltage capability compared to some alternatives

Working Principles

The JAN1N6316/TR diode operates on the principle of unidirectional conduction, allowing current flow in only one direction. When forward biased, it allows current to pass with minimal voltage drop, while in reverse bias, it blocks the current flow efficiently.

Detailed Application Field Plans

This diode is commonly used in power supply circuits, rectifiers, voltage regulators, and various electronic devices requiring efficient AC to DC conversion and voltage regulation. It finds applications in power electronics, consumer electronics, automotive systems, and industrial equipment.

Detailed and Complete Alternative Models

• Alternative Model 1: 1N4001 - General Purpose Rectifier Diode
• Alternative Model 2: 1N5819 - Schottky Barrier Rectifier
• Alternative Model 3: 1N5408 - Standard Recovery Rectifier

Note: The above alternative models are provided as examples and may not be direct substitutes for all applications.

This comprehensive entry provides detailed information about the JAN1N6316/TR semiconductor diode, including its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.