JAN1N6311US

Product Overview

Category: Semiconductor Diode
Use: Rectification and voltage regulation
Characteristics: High reliability, low forward voltage drop, fast switching speed
Package: Axial leaded, DO-35
Essence: Efficient rectification and voltage regulation
Packaging/Quantity: Available in reels or bulk packaging

Specifications

Forward Voltage Drop: 0.72V at 1A
Reverse Leakage Current: 5µA at 100V
Maximum Reverse Voltage: 200V
Maximum Average Forward Current: 1A
Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The JAN1N6311US is a two-terminal device with an anode and a cathode. The anode is denoted by a band on the body of the diode.

Functional Features

Efficient rectification of AC to DC
Fast switching speed for rapid response
Low forward voltage drop minimizes power loss
High reliability ensures long-term performance

Advantages and Disadvantages

Advantages

High reliability
Low forward voltage drop
Fast switching speed

Disadvantages

Limited maximum average forward current (1A)

Working Principles

The JAN1N6311US operates based on the principle of semiconductor diode rectification, allowing current flow in one direction while blocking it in the reverse direction. This enables efficient conversion of alternating current (AC) to direct current (DC) and voltage regulation.

Detailed Application Field Plans

The JAN1N6311US is commonly used in: - Power supply units - Voltage regulators - Rectifier circuits - Switching power supplies - Electronic equipment requiring efficient rectification and voltage regulation

Detailed and Complete Alternative Models

1N5817: Similar characteristics and package
1N5822: Higher maximum average forward current
1N4001: General-purpose rectifier diode with lower forward voltage drop

This comprehensive entry provides detailed information about the JAN1N6311US semiconductor diode, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací JAN1N6311US v technických řešeních

What is JAN1N6311US?
- JAN1N6311US is a high-reliability, military-grade semiconductor diode designed for use in demanding technical applications.
What are the key specifications of JAN1N6311US?
- The JAN1N6311US diode features a forward current of 3A, a reverse voltage of 200V, and a fast recovery time.
In what technical solutions can JAN1N6311US be used?
- JAN1N6311US can be used in power supplies, voltage regulation circuits, rectifiers, and other applications requiring high reliability and performance.
What are the advantages of using JAN1N6311US in technical solutions?
- JAN1N6311US offers high reliability, rugged construction, and consistent performance in harsh environments, making it suitable for critical applications.
Are there any specific environmental conditions that JAN1N6311US is designed to withstand?
- Yes, JAN1N6311US is designed to withstand high temperature, humidity, and mechanical stress, making it suitable for military, aerospace, and industrial applications.
Can JAN1N6311US be used in high-frequency applications?
- Yes, JAN1N6311US has a fast recovery time and can be used in high-frequency applications such as switching power supplies and inverters.
What is the operating temperature range of JAN1N6311US?
- JAN1N6311US operates within a wide temperature range, typically from -65°C to 175°C, making it suitable for extreme conditions.
Does JAN1N6311US have any special packaging requirements?
- Yes, JAN1N6311US is typically available in hermetically sealed glass packages to ensure long-term reliability.
Is JAN1N6311US compliant with any industry standards or certifications?
- Yes, JAN1N6311US is often compliant with MIL-PRF-19500/578 and other military and aerospace standards for semiconductor devices.
Where can JAN1N6311US be sourced for technical solutions?
- JAN1N6311US can be sourced from authorized distributors or directly from manufacturers specializing in military and aerospace components.