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JAN1N6130

JAN1N6130

Product Overview

Category: Semiconductor
Use: Voltage regulator diode
Characteristics: High reliability, low leakage current, and stable voltage regulation
Package: Axial leaded
Essence: Provides precise voltage regulation in electronic circuits
Packaging/Quantity: Available in bulk packaging, quantity varies

Specifications

  • Voltage Rating: 6.8V
  • Power Dissipation: 500mW
  • Operating Temperature Range: -65°C to +175°C
  • Forward Voltage Drop: 1.1V at 200mA

Detailed Pin Configuration

The JAN1N6130 has an axial leaded package with two leads. The anode is connected to the positive terminal of the circuit, while the cathode is connected to the negative terminal.

Functional Features

  • Precise voltage regulation
  • Low leakage current
  • High reliability
  • Stable performance over a wide temperature range

Advantages and Disadvantages

Advantages: - Reliable voltage regulation - Low leakage current - Wide operating temperature range

Disadvantages: - Limited power dissipation capability - Higher forward voltage drop compared to some alternative models

Working Principles

The JAN1N6130 operates by utilizing the properties of semiconductor materials to maintain a constant voltage across its terminals, providing stability to the electronic circuit it is integrated into.

Detailed Application Field Plans

The JAN1N6130 is commonly used in electronic circuits that require precise voltage regulation, such as power supplies, instrumentation, and control systems. Its stable performance makes it suitable for applications where consistent voltage levels are critical.

Detailed and Complete Alternative Models

  • JAN1N5622: Similar voltage rating and characteristics
  • JAN1N5804: Higher power dissipation capability
  • JAN1N746A: Lower forward voltage drop

This completes the entry for JAN1N6130, covering its product details, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací JAN1N6130 v technických řešeních

  1. What is JAN1N6130?

    • JAN1N6130 is a high-reliability, military-grade semiconductor diode designed for use in demanding applications.
  2. What are the key specifications of JAN1N6130?

    • The key specifications include a forward current of 10A, reverse voltage of 200V, and a rugged construction for high-reliability operation.
  3. In what technical solutions can JAN1N6130 be used?

    • JAN1N6130 can be used in power supply circuits, voltage regulation, surge protection, and rectification applications.
  4. What are the advantages of using JAN1N6130 in technical solutions?

    • The advantages include its high reliability, rugged construction, and ability to withstand harsh environmental conditions.
  5. How does JAN1N6130 compare to commercial diodes?

    • JAN1N6130 is designed and tested to meet stringent military standards for reliability and performance, making it more suitable for critical applications compared to commercial diodes.
  6. Can JAN1N6130 be used in aerospace applications?

    • Yes, JAN1N6130 is suitable for use in aerospace and defense systems where high reliability and performance are essential.
  7. What precautions should be taken when using JAN1N6130 in technical solutions?

    • Precautions may include proper heat dissipation, adherence to voltage and current ratings, and consideration of environmental factors such as temperature and humidity.
  8. Are there any specific application notes or guidelines for using JAN1N6130?

    • Manufacturers typically provide application notes and guidelines for the proper use of JAN1N6130 in various technical solutions.
  9. Can JAN1N6130 be used in automotive electronics?

    • Yes, JAN1N6130 can be used in automotive electronics where high reliability and ruggedness are required.
  10. Where can JAN1N6130 be sourced from?

    • JAN1N6130 can be sourced from authorized distributors of military-grade components or directly from manufacturers specializing in high-reliability semiconductors.