Microsemi Corporation
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2N5874

2N5874 Transistor

Product Overview

The 2N5874 is a high-power NPN silicon transistor designed for general-purpose amplifier and switching applications. It falls under the category of discrete semiconductor devices and is commonly used in electronic circuits where high power amplification or switching is required. The transistor exhibits characteristics such as high current and voltage ratings, making it suitable for various industrial and consumer electronics applications. The 2N5874 is typically available in TO-3 metal can package and is sold individually.

Specifications

  • Maximum Collector-Emitter Voltage: 80V
  • Maximum Collector Current: 20A
  • Power Dissipation: 150W
  • Transition Frequency: 4MHz
  • Operating Temperature Range: -65°C to 200°C

Pin Configuration

The 2N5874 transistor has a standard pin configuration with three leads: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

The 2N5874 transistor offers high power amplification and switching capabilities, making it suitable for applications requiring robust performance. Its design allows for efficient heat dissipation, enabling reliable operation in demanding environments.

Advantages and Disadvantages

Advantages

  • High current and voltage ratings
  • Robust construction for reliable performance
  • Suitable for high-power applications

Disadvantages

  • Relatively larger package size compared to smaller SMD transistors
  • Higher cost compared to low-power transistors

Working Principles

The 2N5874 operates based on the principles of bipolar junction transistors (BJT), where the flow of current between the collector and emitter is controlled by the base current. When biased correctly, the transistor can amplify signals or act as a switch in electronic circuits.

Application Field Plans

The 2N5874 transistor finds extensive use in various applications, including: - Power amplifiers - Switching regulators - Motor control circuits - Audio amplifiers - High-power LED drivers

Alternative Models

For applications requiring similar performance, alternative models to the 2N5874 include: - MJL21193 - MJE13009 - TIP35C - 2SC5200

In conclusion, the 2N5874 transistor is a versatile component that offers high-power amplification and switching capabilities, making it suitable for a wide range of electronic applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 2N5874 v technických řešeních

  1. What is the 2N5874 transistor used for?

    • The 2N5874 transistor is commonly used for high-speed switching applications and amplification in electronic circuits.

  2. What are the key specifications of the 2N5874 transistor?

    • The 2N5874 is a high-frequency, high-voltage NPN transistor with a maximum collector-emitter voltage of 80V and a maximum collector current of 3A.

  3. Can the 2N5874 be used for audio amplifier circuits?

    • Yes, the 2N5874 can be used in audio amplifier circuits, especially in applications where high-speed switching is required.

  4. What are some typical applications of the 2N5874 transistor?

    • Typical applications include high-frequency switching circuits, pulse circuits, and RF amplification.

  5. What are the recommended operating conditions for the 2N5874 transistor?

    • The 2N5874 operates best within a temperature range of -65°C to 200°C and should be used with appropriate heat sinking for higher power applications.

  6. Is the 2N5874 suitable for use in low-power applications?

    • While the 2N5874 can be used in low-power applications, it is more commonly utilized in medium to high-power circuits due to its high voltage and current ratings.

  7. What are the typical gain characteristics of the 2N5874 transistor?

    • The 2N5874 has a high current gain (hfe) ranging from 40 to 320 at a collector current of 0.5A.

  8. Can the 2N5874 be used in radio frequency (RF) circuits?

    • Yes, the 2N5874 is well-suited for RF applications due to its high-frequency capabilities and high voltage ratings.

  9. Are there any common failure modes associated with the 2N5874 transistor?

    • Common failure modes include thermal runaway under high-power conditions and breakdown due to excessive voltage or current.

  10. What are some alternative transistors that can be used as substitutes for the 2N5874?

    • Alternative transistors with similar characteristics include the 2N5875, 2N5876, and MJE13005. Always refer to the datasheets for proper substitution guidance.