Microsemi Corporation
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2N5871

2N5871 Transistor

Product Overview

Category:

The 2N5871 is a high-power NPN bipolar junction transistor (BJT).

Use:

It is commonly used in power amplifier and switching applications.

Characteristics:

  • High power handling capability
  • Low collector-emitter saturation voltage
  • Fast switching speed

Package:

The 2N5871 is typically available in a TO-3 metal can package.

Essence:

This transistor is essential for high-power electronic circuits requiring amplification or switching.

Packaging/Quantity:

The 2N5871 is usually sold individually or in small quantities, depending on the supplier.

Specifications

  • Collector-Emitter Voltage (VCEO): 80V
  • Collector-Base Voltage (VCBO): 140V
  • Collector Current (IC): 20A
  • Power Dissipation (Pd): 150W
  • Transition Frequency (ft): 4MHz
  • Operating Temperature Range: -65°C to 200°C

Detailed Pin Configuration

The 2N5871 transistor has three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

  • High power amplification capability
  • Fast switching speed
  • Low saturation voltage

Advantages

  • High power handling capacity
  • Suitable for high-frequency applications
  • Low saturation voltage reduces power loss

Disadvantages

  • Relatively large physical size due to TO-3 package
  • Limited operating temperature range compared to some modern transistors

Working Principles

The 2N5871 operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers across its semiconductor junctions to amplify or switch electronic signals.

Detailed Application Field Plans

The 2N5871 is commonly used in the following applications: - Power amplifiers - Switching circuits in power supplies - Motor control systems

Detailed and Complete Alternative Models

Some alternative models to the 2N5871 include: - MJL21193 - MJE13009 - TIP35C

In conclusion, the 2N5871 transistor is a high-power NPN BJT with characteristics suitable for power amplification and switching applications. Its high power handling capability, fast switching speed, and low saturation voltage make it a valuable component in various electronic circuits.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 2N5871 v technických řešeních

  1. What is the 2N5871 transistor used for?

    • The 2N5871 is a high-power NPN bipolar junction transistor commonly used in power amplifier and switching applications.

  2. What are the key specifications of the 2N5871 transistor?

    • The 2N5871 has a maximum collector current of 15A, a maximum collector-emitter voltage of 80V, and a power dissipation of 150W.

  3. How can I use the 2N5871 in a power amplifier circuit?

    • The 2N5871 can be used as the output transistor in audio or RF power amplifier circuits due to its high power handling capabilities.

  4. Can the 2N5871 be used in switching applications?

    • Yes, the 2N5871 is suitable for high-speed switching applications due to its high current and voltage ratings.

  5. What are the typical operating conditions for the 2N5871?

    • The 2N5871 is typically operated at a collector current of 8-10A and a collector-emitter voltage of 20-40V.

  6. Are there any specific heat dissipation requirements for the 2N5871?

    • It is important to ensure proper heat sinking for the 2N5871 to prevent overheating, especially when operating at high currents and power levels.

  7. Can the 2N5871 be used in automotive applications?

    • Yes, the 2N5871 is suitable for automotive electronic systems such as power supplies and motor control.

  8. What are the common failure modes of the 2N5871?

    • Common failure modes include thermal runaway due to inadequate heat dissipation and overvoltage stress leading to breakdown.

  9. Is the 2N5871 suitable for high-frequency applications?

    • While the 2N5871 can be used in RF power amplifiers, it may not be ideal for very high-frequency applications due to its internal capacitances.

  10. Where can I find detailed application notes for using the 2N5871 in technical solutions?

    • Detailed application notes for the 2N5871 can be found in the manufacturer's datasheet and application guides, as well as in technical literature on power transistor applications.