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2N5839 Transistor
Product Overview
Category
The 2N5839 is a high-frequency NPN transistor.
Use
It is commonly used in RF (radio frequency) applications, such as amplifiers and oscillators.
Characteristics
- High-frequency capability
- Low noise
- High gain
Package
The 2N5839 is typically available in TO-39 metal can package.
Essence
This transistor is essential for amplifying and processing high-frequency signals in electronic circuits.
Packaging/Quantity
The 2N5839 is usually sold in reels or tubes containing multiple units.
Specifications
- Maximum Collector-Base Voltage: 30V
- Maximum Collector Current: 50mA
- Power Dissipation: 300mW
- Transition Frequency: 800MHz
Detailed Pin Configuration
- Emitter (E)
- Base (B)
- Collector (C)
Functional Features
- High-frequency amplification
- Low noise operation
- Suitable for RF applications
Advantages
- High gain
- Low noise figure
- Wide operating frequency range
Disadvantages
- Limited power handling capacity
- Sensitive to voltage spikes
Working Principles
The 2N5839 operates based on the principles of amplification and control of high-frequency signals. When biased correctly, it allows for the controlled flow of current between its terminals, enabling signal amplification.
Detailed Application Field Plans
The 2N5839 is widely used in: - RF amplifiers - Oscillators - Radio transmitters - Communication systems
Detailed and Complete Alternative Models
Some alternative models to the 2N5839 include: - 2N5179 - 2N3904 - 2N2222
In conclusion, the 2N5839 transistor is a crucial component in high-frequency electronic circuits, offering high gain and low noise characteristics. Its application spans across various RF systems, making it an essential part of modern communication and electronic devices.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 2N5839 v technických řešeních
What is the 2N5839 transistor used for?
- The 2N5839 is a high-frequency, high-gain N-channel JFET transistor commonly used in RF amplifier and oscillator circuits.
What are the key specifications of the 2N5839 transistor?
- The 2N5839 has a maximum drain-source voltage of 25V, a maximum gate-source voltage of 25V, and a maximum power dissipation of 350mW.
How do I bias the 2N5839 transistor for my circuit?
- The 2N5839 is typically biased using a fixed DC voltage applied to the gate terminal to set the operating point of the transistor.
Can the 2N5839 be used as a switch in digital applications?
- No, the 2N5839 is not suitable for digital switching applications due to its characteristics as a JFET transistor.
What are some common applications of the 2N5839 in technical solutions?
- The 2N5839 is often used in radio frequency amplifiers, mixers, oscillators, and low-noise preamplifiers.
What are the typical input and output impedances of the 2N5839 transistor?
- The input impedance of the 2N5839 is high, typically in the range of tens to hundreds of megohms, while the output impedance is relatively low.
How do I ensure stability when using the 2N5839 in my circuit?
- Proper bypassing and decoupling of the power supply, as well as attention to grounding and layout considerations, can help ensure stability in circuits using the 2N5839.
What are the temperature considerations for the 2N5839?
- The 2N5839 has a specified operating temperature range of -55°C to 150°C, making it suitable for a wide range of environments.
Can the 2N5839 be used in audio amplifier applications?
- While the 2N5839 is primarily designed for RF applications, it can be used in certain low-frequency amplifier designs with appropriate consideration of its characteristics.
Are there any common pitfalls to avoid when using the 2N5839 in technical solutions?
- It's important to avoid exceeding the maximum ratings of the transistor, ensure proper biasing, and minimize parasitic capacitances in high-frequency applications.