Microsemi Corporation
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1N5812
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1N5812 Diode

Product Overview

  • Category: Diode
  • Use: Rectification
  • Characteristics: Low voltage drop, high current capability
  • Package: DO-41
  • Essence: Schottky diode
  • Packaging/Quantity: Typically available in reels or tubes

Specifications

  • Forward Voltage Drop: 0.45V at 1A
  • Reverse Voltage: 20V
  • Maximum Continuous Forward Current: 1A
  • Operating Temperature Range: -65°C to +125°C

Detailed Pin Configuration

The 1N5812 is a two-terminal device with an anode and a cathode. The anode is typically marked with a band.

Functional Features

  • Fast switching speed
  • Low power loss
  • High efficiency

Advantages

  • Low forward voltage drop
  • High current capability
  • Fast recovery time

Disadvantages

  • Limited reverse voltage rating
  • Sensitive to overvoltage conditions

Working Principles

The 1N5812 is a Schottky diode, which utilizes a metal-semiconductor junction to achieve its unique characteristics. It operates by allowing current to flow more freely in one direction than the other, resulting in low forward voltage drop and fast switching.

Detailed Application Field Plans

  • Power supplies
  • Voltage clamping circuits
  • Reverse polarity protection

Detailed and Complete Alternative Models

  • 1N5817
  • 1N5819
  • SS12
  • SS14

This comprehensive entry provides an in-depth understanding of the 1N5812 diode, covering its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 1N5812 v technických řešeních

  1. What is the 1N5812 diode used for?

    • The 1N5812 diode is commonly used as a Schottky diode in various electronic circuits to prevent reverse voltage and current flow.

  2. What are the key features of the 1N5812 diode?

    • The 1N5812 diode features low forward voltage drop, high surge capability, and fast switching speed, making it suitable for high-frequency applications.

  3. What is the maximum forward voltage of the 1N5812 diode?

    • The maximum forward voltage of the 1N5812 diode is typically around 0.45V at a forward current of 1A.

  4. How does the 1N5812 diode compare to standard silicon diodes?

    • The 1N5812 diode has a lower forward voltage drop compared to standard silicon diodes, making it more efficient in certain applications.

  5. What are some typical applications of the 1N5812 diode?

    • The 1N5812 diode is commonly used in power supply circuits, voltage clamping circuits, and reverse polarity protection circuits.

  6. What is the maximum reverse voltage rating of the 1N5812 diode?

    • The 1N5812 diode has a maximum reverse voltage rating of 20V, making it suitable for low voltage applications.

  7. Can the 1N5812 diode handle high currents?

    • Yes, the 1N5812 diode is capable of handling high surge currents, which makes it suitable for applications with transient loads.

  8. What is the temperature range for the 1N5812 diode?

    • The 1N5812 diode is typically rated for operation within a temperature range of -65°C to 125°C, making it suitable for a wide range of environments.

  9. Is the 1N5812 diode suitable for use in automotive electronics?

    • Yes, the 1N5812 diode is often used in automotive applications due to its ruggedness and ability to handle high temperatures and transient conditions.

  10. Are there any specific layout considerations when using the 1N5812 diode?

    • It is important to minimize the length of the traces connecting the 1N5812 diode to other components to reduce parasitic inductance and ensure optimal performance.