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1N5755B

1N5755B

Product Overview

Category:

The 1N5755B is a Zener diode, which falls under the category of semiconductor devices.

Use:

It is commonly used for voltage regulation and protection in electronic circuits.

Characteristics:

  • Forward Voltage: 1.2V
  • Reverse Voltage: 6.8V
  • Power Dissipation: 500mW
  • Package Type: DO-35
  • Operating Temperature Range: -65°C to +200°C

Packaging/Quantity:

The 1N5755B is typically available in reels or bulk packaging, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage - Zener (Nom) (Vz): 6.8V
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 20 Ohm
  • Current - Reverse Leakage @ Vr: 100nA @ 5.1V
  • Tolerance: ±5%
  • Operating Temperature: -65°C to +200°C

Detailed Pin Configuration

The 1N5755B Zener diode has two pins, with the anode connected to the positive side and the cathode connected to the negative side of the circuit.

Functional Features

The 1N5755B Zener diode provides a stable reference voltage when operated in its reverse breakdown region, making it suitable for voltage regulation and overvoltage protection applications.

Advantages and Disadvantages

Advantages

  • Precise voltage regulation
  • Overvoltage protection
  • Wide operating temperature range

Disadvantages

  • Limited power dissipation capability
  • Tolerance of ±5% may not be suitable for some precision applications

Working Principles

When the reverse voltage across the 1N5755B exceeds its specified breakdown voltage, it allows current to flow in the reverse direction, maintaining a constant voltage drop across its terminals.

Detailed Application Field Plans

The 1N5755B is commonly used in: - Voltage regulators - Overvoltage protection circuits - Power supplies - Electronic equipment requiring stable reference voltages

Detailed and Complete Alternative Models

Some alternative models to the 1N5755B include: - 1N5221B - 1N4739A - BZX55C6V8

In conclusion, the 1N5755B Zener diode is a reliable component for voltage regulation and protection in various electronic applications, offering precise voltage control and overvoltage protection within a wide temperature range.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 1N5755B v technických řešeních

  1. What is the 1N5755B diode used for?

    • The 1N5755B diode is commonly used for voltage regulation and transient suppression in various technical solutions.
  2. What is the maximum forward voltage of the 1N5755B diode?

    • The maximum forward voltage of the 1N5755B diode is typically around 1.1 volts at a forward current of 200 mA.
  3. What is the reverse breakdown voltage of the 1N5755B diode?

    • The reverse breakdown voltage of the 1N5755B diode is typically 36 volts.
  4. Can the 1N5755B diode handle high current surges?

    • Yes, the 1N5755B diode is designed to handle high current surges, making it suitable for transient suppression applications.
  5. What are the typical applications of the 1N5755B diode?

    • Typical applications of the 1N5755B diode include voltage clamping, overvoltage protection, and transient voltage suppression in electronic circuits.
  6. Is the 1N5755B diode suitable for automotive applications?

    • Yes, the 1N5755B diode is often used in automotive electronics for its transient suppression capabilities.
  7. What is the operating temperature range of the 1N5755B diode?

    • The 1N5755B diode is typically rated for operation within a temperature range of -65°C to 175°C.
  8. Does the 1N5755B diode require a heat sink for certain applications?

    • Depending on the specific application and power dissipation, a heat sink may be recommended for the 1N5755B diode to ensure optimal performance.
  9. Can the 1N5755B diode be used in flyback converter circuits?

    • Yes, the 1N5755B diode can be utilized in flyback converter circuits for energy storage and voltage regulation.
  10. Are there any specific layout considerations when using the 1N5755B diode in PCB designs?

    • It is important to consider proper PCB layout techniques to minimize parasitic inductance and ensure efficient transient suppression when using the 1N5755B diode.