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1N4741PE3/TR8

1N4741PE3/TR8 - Semiconductor Diode

Product Overview

Category

The 1N4741PE3/TR8 belongs to the category of semiconductor diodes.

Use

It is commonly used in electronic circuits for voltage regulation and rectification.

Characteristics

  • Forward Voltage: 1.0V
  • Reverse Voltage: 12V
  • Power Dissipation: 1.0W
  • Operating Temperature: -65°C to +200°C

Package

The 1N4741PE3/TR8 comes in a DO-41 package.

Essence

This semiconductor diode is essential for regulating and rectifying voltage in electronic circuits.

Packaging/Quantity

It is typically packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Manufacturer: ON Semiconductor
  • Part Number: 1N4741PE3/TR8
  • Type: Zener Diode
  • Voltage Tolerance: ±5%
  • Mounting Type: Through Hole
  • RoHS Compliant: Yes

Detailed Pin Configuration

The 1N4741PE3/TR8 has two pins, anode, and cathode, with the anode being the positive terminal and the cathode being the negative terminal.

Functional Features

  • Zener diode designed for voltage regulation
  • Provides stable voltage output across a wide range of currents

Advantages

  • Precise voltage regulation
  • Compact size
  • Wide operating temperature range

Disadvantages

  • Limited power dissipation capability
  • Susceptible to damage from excessive current or voltage spikes

Working Principles

The 1N4741PE3/TR8 operates based on the principle of the Zener effect, where it maintains a nearly constant voltage across its terminals when reverse-biased at its breakdown voltage.

Detailed Application Field Plans

Voltage Regulation

Used in power supplies and voltage regulators to maintain a stable output voltage.

Overvoltage Protection

Employed in circuits to protect sensitive components from voltage spikes.

Signal Clipping

Utilized in audio circuits to clip off excessive signal amplitudes.

Detailed and Complete Alternative Models

  • 1N4733A
  • 1N4734A
  • 1N4735A
  • 1N4736A

These alternative models offer similar voltage ratings and characteristics, providing flexibility in design and application.

This comprehensive entry provides detailed insights into the 1N4741PE3/TR8 semiconductor diode, covering its basic information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, making it a valuable resource for engineers and enthusiasts in the electronics industry.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 1N4741PE3/TR8 v technických řešeních

  1. What is the 1N4741PE3/TR8?

    • The 1N4741PE3/TR8 is a Zener diode with a voltage rating of 10V and a power rating of 1W.
  2. What are the typical applications of the 1N4741PE3/TR8?

    • It is commonly used in voltage regulation, voltage reference, and overvoltage protection circuits.
  3. What is the maximum power dissipation of the 1N4741PE3/TR8?

    • The maximum power dissipation is 1W.
  4. What is the voltage tolerance of the 1N4741PE3/TR8?

    • The voltage tolerance is typically +/- 5%.
  5. How does the 1N4741PE3/TR8 behave in reverse bias?

    • In reverse bias, the 1N4741PE3/TR8 behaves like a regular diode until the breakdown voltage is reached, at which point it conducts in the reverse direction to maintain a constant voltage drop.
  6. Can the 1N4741PE3/TR8 be used for voltage regulation?

    • Yes, it can be used as a simple voltage regulator in low-power applications.
  7. What are the temperature characteristics of the 1N4741PE3/TR8?

    • The temperature coefficient of the voltage is typically around -2mV/°C.
  8. Is the 1N4741PE3/TR8 suitable for precision voltage references?

    • While it can be used as a voltage reference, its tolerance may not be sufficient for precision applications without additional circuitry.
  9. What are the common package types for the 1N4741PE3/TR8?

    • The 1N4741PE3/TR8 is commonly available in DO-41 axial leaded packages.
  10. Can the 1N4741PE3/TR8 be used for overvoltage protection?

    • Yes, it can be used to protect sensitive components from overvoltage by shunting excess current when the voltage exceeds its breakdown voltage.