PC28F512M29AWLB TR

Product Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory for storing data in electronic devices
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Capacity: 512 Megabits (64 Megabytes)
• Interface: Parallel
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Erase/Program Cycles: 100,000 minimum
• Data Retention: 20 years minimum

Detailed Pin Configuration

The PC28F512M29AWLB TR flash memory module has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write Enable
6. CE#: Chip Enable
7. OE#: Output Enable
8. RP#/BYTE#: Reset/Byte# (Reset or Byte Enable)
9. RY/BY#: Ready/Busy (Ready or Busy status)
10. WP#/ACC: Write Protect/Accumulator (Write Protect or Accumulator)

Functional Features

• High-speed read and write operations
• Efficient erase and program cycles
• Low power consumption
• Reliable data retention
• Advanced error correction techniques
• Secure data protection mechanisms

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Wide operating temperature range - Long data retention period - Robust error correction capabilities

Disadvantages: - Limited erase/program cycles - Relatively high power consumption during write operations

Working Principles

The PC28F512M29AWLB TR flash memory utilizes a floating gate transistor structure to store data. When programming, an electric charge is trapped in the floating gate, altering the transistor's threshold voltage and storing a binary value. Erasing involves removing the trapped charge, resetting the transistor to its initial state. Reading retrieves the stored data by measuring the transistor's threshold voltage.

Detailed Application Field Plans

The PC28F512M29AWLB TR flash memory module finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - Digital cameras - Mobile phones - Tablets - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. PC28F256M29EWLA TR: 256 Megabit parallel flash memory with similar specifications.
2. PC28F128M29EWHB TR: 128 Megabit parallel flash memory with comparable features.
3. PC28F64M29ELHB TR: 64 Megabit parallel flash memory suitable for lower capacity requirements.

These alternative models offer different capacities and may have slight variations in specifications, but they serve as viable alternatives based on specific application needs.

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