MT53E512M64D4NW-053 WT:E

Basic Information Overview

• Category: Memory module
• Use: Storage and retrieval of data in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Low power consumption
• Package: Integrated circuit (IC)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Single unit

Specifications

• Model: MT53E512M64D4NW-053 WT:E
• Capacity: 512 megabytes (MB)
• Type: DDR4 SDRAM
• Speed: 2400 megahertz (MHz)
• Voltage: 1.2 volts (V)
• Form Factor: 288-pin dual in-line memory module (DIMM)
• Operating Temperature: 0 to 85 degrees Celsius

Detailed Pin Configuration

The MT53E512M64D4NW-053 WT:E memory module has a total of 288 pins arranged in a specific configuration. The pinout diagram is as follows:

[Insert pinout diagram here]

Functional Features

• High-speed data transfer: The DDR4 SDRAM technology allows for faster data transfer rates, improving overall system performance.
• Low power consumption: The memory module operates at a low voltage of 1.2V, reducing power consumption and heat generation.
• Error correction: ECC (Error Correction Code) functionality helps detect and correct memory errors, ensuring data integrity.
• Compatibility: The module is designed to be compatible with various electronic devices and systems.

Advantages and Disadvantages

Advantages

• High capacity: With a capacity of 512MB, the module can store a large amount of data.
• Fast data transfer rate: The DDR4 SDRAM technology enables high-speed data transfer, enhancing system responsiveness.
• Low power consumption: The module consumes less power, contributing to energy efficiency.
• Error correction: ECC functionality ensures data integrity, minimizing the risk of data corruption.

Disadvantages

• Limited capacity: Compared to higher-capacity memory modules available in the market, the 512MB capacity may be considered relatively low for certain applications.
• Compatibility limitations: While designed to be compatible with various systems, there might be compatibility issues with older devices or specific configurations.

Working Principles

The MT53E512M64D4NW-053 WT:E memory module operates based on DDR4 SDRAM technology. It stores data in an array of capacitors, which can hold a charge representing binary information (0s and 1s). The module communicates with the system's memory controller, allowing for data storage and retrieval operations. When the system requires data, it is read from the memory module and transferred to the processor for further processing.

Detailed Application Field Plans

The MT53E512M64D4NW-053 WT:E memory module finds application in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Workstations - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

• MT53B256M32D2NP-053 WT:E
• MT53D512M32D2NP-053 WT:E
• MT53E1G32D4NP-053 WT:E
• MT53E2G32D8NP-053 WT:E
• MT53F1G32D4NP-053 WT:E

These alternative models offer different capacities and specifications to cater to diverse requirements.

[Include additional alternative models if available]

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