MT53E512M64D4NW-046 WT:E

Basic Information Overview

• Category: Memory module
• Use: Storage and retrieval of data in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Low power consumption
• Package: Integrated circuit (IC)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Single unit

Specifications

• Model: MT53E512M64D4NW-046 WT:E
• Capacity: 512 megabytes (MB)
• Type: DDR4 SDRAM
• Speed: 2400 megahertz (MHz)
• Voltage: 1.2 volts (V)
• Form Factor: 288-pin DIMM
• Operating Temperature: 0 to 85 degrees Celsius

Detailed Pin Configuration

The MT53E512M64D4NW-046 WT:E memory module has a total of 288 pins arranged in a specific configuration. The pinout diagram and corresponding functions are as follows:

| Pin Number | Function | |------------|----------| | 1 | VSS | | 2 | DQ0 | | 3 | DQ1 | | ... | ... | | 286 | VDDSPD | | 287 | VSS | | 288 | VDD |

Functional Features

• High-speed data transfer: The DDR4 SDRAM technology allows for faster data access and retrieval.
• Low power consumption: The memory module operates at a low voltage, reducing energy consumption.
• Error correction: ECC (Error Correction Code) ensures data integrity by detecting and correcting errors.
• Compatibility: The module is designed to be compatible with various electronic devices and systems.

Advantages and Disadvantages

Advantages

• Large storage capacity
• High data transfer rate
• Low power consumption
• Error correction capability

Disadvantages

• Relatively higher cost compared to lower-capacity memory modules
• Limited compatibility with older devices that do not support DDR4 technology

Working Principles

The MT53E512M64D4NW-046 WT:E memory module stores and retrieves data using DDR4 SDRAM technology. It operates by storing data in cells within the integrated circuit, which can be accessed and manipulated based on specific commands from the device's controller. The high-speed data transfer is achieved through advanced signaling techniques and improved circuit design.

Detailed Application Field Plans

The MT53E512M64D4NW-046 WT:E memory module finds applications in various electronic devices, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Gaming consoles 5. Networking equipment

Detailed and Complete Alternative Models

1. MT53B256M32D2NP-046 WT:E

   • Capacity: 256 megabytes (MB)
   • Type: DDR2 SDRAM
   • Speed: 800 megahertz (MHz)
   • Voltage: 1.8 volts (V)
   • Form Factor: 240-pin DIMM

2. MT53C128M16D1EB-046 WT:E

   • Capacity: 128 megabytes (MB)
   • Type: DDR3 SDRAM
   • Speed: 1600 megahertz (MHz)
   • Voltage: 1.5 volts (V)
   • Form Factor: 204-pin SODIMM

3. MT53A1G32D4PG-046 WT:E

   • Capacity: 1 gigabyte (GB)
   • Type: DDR4 SDRAM
   • Speed: 3200 megahertz (MHz)
   • Voltage: 1.35 volts (V)
   • Form Factor: 288-pin DIMM

These alternative models offer different capacities, speeds, and form factors to cater to various device requirements.

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