Micron Technology Inc.
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MT53D512M64D4NY-046 XT ES:E TR

MT53D512M64D4NY-046 XT ES:E TR

Product Overview

Category

The MT53D512M64D4NY-046 XT ES:E TR belongs to the category of memory modules.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, servers, and embedded systems.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Compact form factor

Package

The MT53D512M64D4NY-046 XT ES:E TR comes in a small form factor package, making it suitable for space-constrained applications.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

Each package of the MT53D512M64D4NY-046 XT ES:E TR contains a single memory module.

Specifications

  • Model: MT53D512M64D4NY-046 XT ES:E TR
  • Memory Type: DDR4
  • Capacity: 512MB
  • Speed: 2400MHz
  • Voltage: 1.2V
  • Interface: 288-pin DIMM
  • Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT53D512M64D4NY-046 XT ES:E TR follows the standard 288-pin DIMM pin configuration. Please refer to the product datasheet for the detailed pinout diagram.

Functional Features

  • High-speed data transfer
  • Error correction capabilities
  • Auto-refresh and self-refresh modes
  • On-die termination for improved signal integrity

Advantages and Disadvantages

Advantages

  • Fast data transfer speeds enhance system performance.
  • Large storage capacity allows for storing a significant amount of data.
  • Low power consumption helps in reducing energy usage.
  • Compact form factor enables easy integration into various devices.

Disadvantages

  • Relatively small capacity compared to higher-end memory modules.
  • Limited compatibility with older systems that do not support DDR4 technology.

Working Principles

The MT53D512M64D4NY-046 XT ES:E TR operates based on the principles of DDR4 memory technology. It utilizes synchronous dynamic random-access memory (SDRAM) to store and retrieve data at high speeds. The memory controller within the device coordinates the transfer of data between the memory module and the host system.

Detailed Application Field Plans

The MT53D512M64D4NY-046 XT ES:E TR is suitable for a wide range of applications, including: - Desktop computers - Laptops - Servers - Workstations - Embedded systems - Networking equipment

Detailed and Complete Alternative Models

  1. MT53D256M32D2DS-053 XT ES:E TR

    • Memory Type: DDR2
    • Capacity: 256MB
    • Speed: 533MHz
    • Voltage: 1.8V
    • Interface: 240-pin DIMM

  2. MT53D1024M16D1DS-046 XT ES:E TR

    • Memory Type: DDR3
    • Capacity: 1GB
    • Speed: 1600MHz
    • Voltage: 1.5V
    • Interface: 204-pin SODIMM

  3. MT53D2048M8D4DS-046 XT ES:E TR

    • Memory Type: DDR4
    • Capacity: 2GB
    • Speed: 3200MHz
    • Voltage: 1.35V
    • Interface: 288-pin DIMM

These alternative models offer different specifications and capacities to cater to various system requirements.

In conclusion, the MT53D512M64D4NY-046 XT ES:E TR is a DDR4 memory module with high-speed performance, large storage capacity, and low power consumption. It is widely used in computers, servers, and embedded systems. While it has advantages such as fast data transfer speeds and compact form factor, it also has limitations in terms of capacity and compatibility. Nonetheless, it serves as an essential component for enhancing system performance in various applications.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT53D512M64D4NY-046 XT ES:E TR v technických řešeních

Sure! Here are 10 common questions and answers related to the application of MT53D512M64D4NY-046 XT ES:E TR in technical solutions:

  1. Question: What is the capacity of the MT53D512M64D4NY-046 XT ES:E TR memory module?
    Answer: The MT53D512M64D4NY-046 XT ES:E TR has a capacity of 512 megabytes (MB).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT53D512M64D4NY-046 XT ES:E TR is typically 1.2 volts.

  3. Question: What is the maximum clock frequency supported by this memory module?
    Answer: The MT53D512M64D4NY-046 XT ES:E TR supports a maximum clock frequency of 1600 megahertz (MHz).

  4. Question: Is this memory module compatible with DDR4 technology?
    Answer: Yes, the MT53D512M64D4NY-046 XT ES:E TR is based on DDR4 technology.

  5. Question: Can I use this memory module in a laptop or desktop computer?
    Answer: Yes, the MT53D512M64D4NY-046 XT ES:E TR can be used in both laptops and desktop computers that support DDR4 memory.

  6. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: No, the MT53D512M64D4NY-046 XT ES:E TR does not support ECC.

  7. Question: What is the temperature range for reliable operation of this memory module?
    Answer: The MT53D512M64D4NY-046 XT ES:E TR is designed to operate reliably within a temperature range of -40 to 85 degrees Celsius.

  8. Question: Can I use multiple MT53D512M64D4NY-046 XT ES:E TR modules together for increased memory capacity?
    Answer: Yes, you can use multiple modules together to increase the overall memory capacity in your system.

  9. Question: Is this memory module compatible with both Intel and AMD processors?
    Answer: Yes, the MT53D512M64D4NY-046 XT ES:E TR is compatible with both Intel and AMD processors that support DDR4 memory.

  10. Question: Does this memory module come with any warranty?
    Answer: The warranty terms may vary depending on the manufacturer or seller. It's recommended to check the specific warranty details provided by the supplier or refer to the product documentation for more information.