MT53D512M64D4NW-053 WT ES:E TR

Basic Information Overview

• Category: Memory Module
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Low power consumption
• Package: Integrated circuit (IC)
• Essence: Non-volatile memory module
• Packaging/Quantity: Single unit

Specifications

• Model: MT53D512M64D4NW-053 WT ES:E TR
• Capacity: 512 megabytes (MB)
• Type: DDR4 SDRAM
• Speed: 2400 megahertz (MHz)
• Voltage: 1.2 volts (V)
• Form Factor: 288-pin DIMM
• Error Correction Code (ECC): No
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT53D512M64D4NW-053 WT ES:E TR memory module has a 288-pin DIMM form factor. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VSS | Ground | | 2 | DQ0 | Data Bit 0 | | 3 | DQ1 | Data Bit 1 | | ... | ... | ... | | 287 | VDDSPD | Power Supply for Serial Presence Detect (SPD) EEPROM | | 288 | VDD | Power Supply |

Functional Features

• High-speed data transfer: The DDR4 SDRAM technology allows for faster data access and transfer rates, improving overall system performance.
• Low power consumption: The memory module operates at a low voltage of 1.2V, reducing power consumption and heat generation.
• Non-volatile memory: The data stored in the module is retained even when power is removed, ensuring data integrity and reliability.

Advantages and Disadvantages

Advantages: - High capacity for storing large amounts of data. - Fast data transfer rate improves system performance. - Low power consumption reduces energy usage. - Non-volatile memory ensures data integrity.

Disadvantages: - Limited compatibility with older devices that do not support DDR4 technology. - Relatively higher cost compared to older memory module types.

Working Principles

The MT53D512M64D4NW-053 WT ES:E TR memory module works by storing data in an array of capacitors within the integrated circuit. Each capacitor represents a bit of information, which can be read or written by applying appropriate electrical signals. The DDR4 SDRAM technology allows for faster data access by utilizing advanced signaling techniques and improved circuitry design.

Detailed Application Field Plans

The MT53D512M64D4NW-053 WT ES:E TR memory module is commonly used in various electronic devices, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and workstations 4. Gaming consoles 5. Networking equipment

Detailed and Complete Alternative Models

1. MT53B256M32D2NP-062 WT ES:A TR

   • Capacity: 256 megabytes (MB)
   • Type: DDR2 SDRAM
   • Speed: 800 megahertz (MHz)
   • Voltage: 1.8 volts (V)
   • Form Factor: 240-pin DIMM
   • ECC: No

2. MT53E1G32D4NQ-046 WT ES:D TR

   • Capacity: 1 gigabyte (GB)
   • Type: DDR4 SDRAM
   • Speed: 3200 megahertz (MHz)
   • Voltage: 1.35 volts (V)
   • Form Factor: 288-pin DIMM
   • ECC: Yes

3. MT53F512M32D2NP-046 WT ES:A TR

   • Capacity: 512 megabytes (MB)
   • Type: DDR2 SDRAM
   • Speed: 800 megahertz (MHz)
   • Voltage: 1.8 volts (V)
   • Form Factor: 240-pin DIMM
   • ECC: No

These alternative models provide different capacities, speeds, voltages, and form factors to suit various system requirements.

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