MT53D512M64D4NW-046 WT ES:E TR

Product Overview

Category

The MT53D512M64D4NW-046 WT ES:E TR belongs to the category of memory modules.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, servers, and mobile devices.

Characteristics

• High-speed performance: The MT53D512M64D4NW-046 WT ES:E TR offers fast data transfer rates, enabling efficient processing of large amounts of information.
• Large capacity: With a capacity of 512 megabytes, this memory module can store a significant amount of data.
• Low power consumption: The product is designed to consume minimal power, making it energy-efficient.
• Compact package: The MT53D512M64D4NW-046 WT ES:E TR is packaged in a compact form factor, allowing for easy integration into various electronic devices.
• Reliable operation: This memory module is built with high-quality components, ensuring reliable and stable performance.

Packaging/Quantity

The MT53D512M64D4NW-046 WT ES:E TR is typically packaged individually in an anti-static bag to prevent damage from electrostatic discharge. It is available in both single-unit and bulk quantities, depending on the customer's requirements.

Specifications

• Model: MT53D512M64D4NW-046 WT ES:E TR
• Capacity: 512 megabytes
• Memory Type: DDR4 SDRAM
• Bus Speed: 2400 MHz
• Voltage: 1.2V
• Form Factor: DIMM (Dual In-Line Memory Module)
• Pin Count: 288 pins
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT53D512M64D4NW-046 WT ES:E TR memory module has a total of 288 pins arranged in a specific configuration. The pinout diagram and corresponding functions are as follows:

(Pin Configuration Diagram)

1. VSS - Ground
2. DQ0 - Data Input/Output Bit 0
3. DQ1 - Data Input/Output Bit 1
4. DQ2 - Data Input/Output Bit 2
5. DQ3 - Data Input/Output Bit 3
6. ... ...
7. VDD - Power Supply

Functional Features

• High-speed data transfer: The MT53D512M64D4NW-046 WT ES:E TR memory module offers fast data transfer rates, allowing for quick access to stored information.
• Error correction: This product incorporates error correction techniques to ensure data integrity and reliability.
• Auto-refresh capability: The memory module automatically refreshes its contents at regular intervals, preventing data loss due to decay.

Advantages and Disadvantages

Advantages

• Fast data transfer speeds enhance overall system performance.
• Large capacity allows for storage of substantial amounts of data.
• Low power consumption contributes to energy efficiency.
• Compact form factor enables easy integration into various devices.
• Reliable operation ensures stable performance.

Disadvantages

• Limited capacity compared to higher-end memory modules.
• Higher cost per gigabyte compared to lower-capacity alternatives.

Working Principles

The MT53D512M64D4NW-046 WT ES:E TR memory module operates based on the principles of DDR4 SDRAM technology. It utilizes synchronous dynamic random-access memory (SDRAM) cells to store and retrieve data. The module communicates with the device's memory controller through a high-speed bus, enabling rapid data transfer.

Detailed Application Field Plans

The MT53D512M64D4NW-046 WT ES:E TR memory module finds applications in various fields, including: - Personal computers - Laptops and notebooks - Servers - Workstations - Networking equipment - Gaming consoles

Detailed and Complete Alternative Models

1. MT53D256M32D2NW-046 WT ES:E TR: 256 megabytes capacity, DDR2 SDRAM, 2400 MHz bus speed.
2. MT53D1024M128D8NW-046 WT ES:E TR: 1 gigabyte capacity, DDR3 SDRAM, 2400 MHz bus speed.
3. MT53D2048M256D16NW-046 WT ES:E TR: 2 gigabytes capacity, DDR4 SDRAM, 2400 MHz bus speed.

These alternative models offer different capacities and memory types to cater to diverse requirements.

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