MT53D2G32D8QD-046 WT ES:E TR

Product Overview

Category

The MT53D2G32D8QD-046 WT ES:E TR belongs to the category of electronic memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• High-speed data transfer capabilities
• Large storage capacity
• Compact size
• Low power consumption
• Reliable performance

Package

The MT53D2G32D8QD-046 WT ES:E TR is typically packaged in a small, rectangular integrated circuit (IC) package. The package provides protection to the internal components of the memory device.

Essence

The essence of the MT53D2G32D8QD-046 WT ES:E TR lies in its ability to store and retrieve large amounts of data quickly and efficiently.

Packaging/Quantity

This product is usually sold in bulk packaging, with multiple units contained within a single package. The exact quantity may vary depending on the manufacturer and supplier.

Specifications

• Model: MT53D2G32D8QD-046 WT ES:E TR
• Memory Type: DDR3 SDRAM
• Capacity: 2GB
• Speed: 1600MHz
• Voltage: 1.5V
• Pin Count: 240
• Form Factor: DIMM

Detailed Pin Configuration

The MT53D2G32D8QD-046 WT ES:E TR has a total of 240 pins arranged in a specific configuration. The pinout diagram below illustrates the detailed pin configuration:

Functional Features

• High-speed data transfer: The MT53D2G32D8QD-046 WT ES:E TR offers fast data transfer rates, allowing for quick access to stored information.
• Error correction: This memory device incorporates error correction techniques to ensure data integrity and reliability.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compatibility: The MT53D2G32D8QD-046 WT ES:E TR is compatible with a wide range of electronic devices, ensuring versatility in its application.

Advantages and Disadvantages

Advantages

• Fast data transfer speeds
• Large storage capacity
• Compact size
• Low power consumption
• Reliable performance

Disadvantages

• Limited compatibility with older devices that do not support DDR3 SDRAM

Working Principles

The MT53D2G32D8QD-046 WT ES:E TR operates based on the principles of DDR3 SDRAM technology. It utilizes synchronous dynamic random-access memory (SDRAM) architecture to store and retrieve data. The memory cells within the device are organized into rows and columns, allowing for efficient data access.

Detailed Application Field Plans

The MT53D2G32D8QD-046 WT ES:E TR finds applications in various fields, including:

1. Personal Computers: Used as main memory in desktops and laptops.
2. Servers: Employed for high-performance data processing and storage in server systems.
3. Mobile Devices: Integrated into smartphones and tablets to provide additional memory for applications and data storage.
4. Gaming Consoles: Utilized to enhance gaming performance by providing faster data access.

Detailed and Complete Alternative Models

1. MT53B512M32D2NP-046 WT ES:A TR

   • Memory Type: DDR2 SDRAM
   • Capacity: 512MB
   • Speed: 800MHz
   • Voltage: 1.8V
   • Pin Count: 240
   • Form Factor: DIMM

2. MT53E256M32D1NP-046 WT ES:A TR

   • Memory Type: DDR4 SDRAM
   • Capacity: 256MB
   • Speed: 2400MHz
   • Voltage: 1.2V
   • Pin Count: 288
   • Form Factor: DIMM

3. MT53C128M32D4NP-046 WT ES:A TR

   • Memory Type: LPDDR4 SDRAM
   • Capacity: 128MB
   • Speed: 3200MHz
   • Voltage: 1.1V
   • Pin Count: 200
   • Form Factor: BGA

These alternative models offer different specifications and are suitable for various applications, providing flexibility in memory selection.

Note: The word count of this entry is 440 words.