MT53D256M16D1NY-046 XT ES:B TR

Basic Information Overview

• Category: Memory Module
• Use: Storage and retrieval of digital information in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Low power consumption
• Package: Integrated circuit (IC)
• Essence: Non-volatile memory technology
• Packaging/Quantity: Single unit

Specifications

• Model: MT53D256M16D1NY-046 XT ES:B TR
• Capacity: 256 megabits (32 megabytes)
• Organization: 256M x 16 bits
• Interface: Double Data Rate 3 (DDR3)
• Operating Voltage: 1.5V
• Speed: 1600 MHz
• Temperature Range: Extended (-40°C to +85°C)
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT53D256M16D1NY-046 XT ES:B TR memory module has a specific pin configuration as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power supply voltage | | 2 | DQ0 | Data input/output bit 0 | | 3 | DQ1 | Data input/output bit 1 | | ... | ... | ... | | 48 | VSS | Ground |

Note: The table above shows only a subset of the pins for brevity.

Functional Features

• High-speed data transfer: The DDR3 interface allows for fast and efficient data transfer between the memory module and the host device.
• Low power consumption: The MT53D256M16D1NY-046 XT ES:B TR is designed to minimize power usage, making it suitable for battery-powered devices.
• Reliable storage: The non-volatile memory technology ensures that data is retained even when power is disconnected.
• Extended temperature range: The memory module can operate in a wide temperature range, making it suitable for various environments.

Advantages and Disadvantages

Advantages: - High capacity allows for storing large amounts of data. - Fast data transfer rate improves overall system performance. - Low power consumption prolongs battery life. - Reliable storage ensures data integrity.

Disadvantages: - Limited compatibility with older devices that do not support DDR3 interface. - Relatively higher cost compared to lower-capacity memory modules.

Working Principles

The MT53D256M16D1NY-046 XT ES:B TR memory module utilizes DDR3 technology to store and retrieve digital information. It consists of multiple memory cells organized in a specific configuration. When the host device sends a read or write command, the memory controller accesses the appropriate memory cells and transfers the data through the DDR3 interface.

Detailed Application Field Plans

The MT53D256M16D1NY-046 XT ES:B TR memory module finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Consumer electronics (e.g., smartphones, tablets)

Detailed and Complete Alternative Models

• MT53B256M16D1NY-046 XT ES:B TR
• MT53C256M16D1NY-046 XT ES:B TR
• MT53E256M16D1NY-046 XT ES:B TR
• MT53F256M16D1NY-046 XT ES:B TR

These alternative models offer similar specifications and functionality as the MT53D256M16D1NY-046 XT ES:B TR, providing options for different requirements and compatibility.

In conclusion, the MT53D256M16D1NY-046 XT ES:B TR memory module is a high-capacity, fast, and reliable storage solution for electronic devices. Its DDR3 interface, low power consumption, and extended temperature range make it suitable for various applications. While it may have limited compatibility and a higher cost compared to lower-capacity modules, its advantages outweigh the disadvantages in many scenarios.