MT53D1G64D8NZ-046 WT ES:E TR

Product Overview

Category

The MT53D1G64D8NZ-046 WT ES:E TR belongs to the category of computer memory modules.

Use

This product is primarily used as a RAM (Random Access Memory) module in various electronic devices, such as computers, laptops, and servers.

Characteristics

• High-speed data access: The MT53D1G64D8NZ-046 WT ES:E TR offers fast data retrieval and storage capabilities, enhancing overall system performance.
• Large storage capacity: With a capacity of 1GB, this memory module provides ample space for storing and accessing data.
• Low power consumption: The module is designed to operate efficiently with minimal power consumption, contributing to energy savings.
• Compact package: The MT53D1G64D8NZ-046 WT ES:E TR comes in a compact form factor, making it suitable for space-constrained devices.
• Reliable performance: This memory module is built with high-quality components, ensuring reliable and stable operation.

Packaging/Quantity

The MT53D1G64D8NZ-046 WT ES:E TR is typically packaged individually in an anti-static bag to prevent electrostatic damage. It is available in both single-unit and bulk quantities, catering to different customer requirements.

Specifications

• Model: MT53D1G64D8NZ-046 WT ES:E TR
• Capacity: 1GB
• Type: DDR3 SDRAM
• Speed: 1600MHz
• Voltage: 1.5V
• Pin Count: 240
• Form Factor: DIMM (Dual In-Line Memory Module)
• CAS Latency: CL11
• Operating Temperature: 0°C to 85°C

Detailed Pin Configuration

The MT53D1G64D8NZ-046 WT ES:E TR memory module has a total of 240 pins. The pin configuration is as follows:

• Pins 1-120: Data Input/Output (DQ)
• Pins 121-124: Address Inputs (A0-A3)
• Pins 125-126: Bank Select (BA0-BA1)
• Pins 127-128: Column Address Strobe (CAS#)
• Pins 129-130: Row Address Strobe (RAS#)
• Pins 131-132: Write Enable (WE#)
• Pins 133-134: Clock (CLK)
• Pins 135-136: Data Mask (DM)
• Pins 137-138: Chip Select (CS#)
• Pins 139-140: Parity (PAR)
• Pins 141-240: Not Connected (NC)

Functional Features

• High-speed data transfer: The MT53D1G64D8NZ-046 WT ES:E TR supports a high-speed data transfer rate of 1600MHz, ensuring quick and efficient data processing.
• Error correction: This memory module incorporates error correction capabilities, allowing for the detection and correction of data errors, enhancing system reliability.
• Dual In-Line Memory Module (DIMM) form factor: The DIMM design enables easy installation and removal of the memory module, facilitating upgrades or replacements.
• Compatibility: The MT53D1G64D8NZ-046 WT ES:E TR is compatible with various motherboards and systems that support DDR3 SDRAM.

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Limited capacity compared to higher-end memory modules
• Incompatibility with systems that require different memory types (e.g., DDR4)

Working Principles

The MT53D1G64D8NZ-046 WT ES:E TR operates based on the principles of DDR3 SDRAM technology. It stores and retrieves data using a synchronous interface, allowing for high-speed data transfer between the memory module and the system's processor. The module utilizes a combination of capacitors and transistors to store and manipulate data in binary form.

Detailed Application Field Plans

The MT53D1G64D8NZ-046 WT ES:E TR memory module finds extensive application in various fields, including:

1. Personal Computers: This memory module is commonly used in desktop computers for improved multitasking capabilities and faster program execution.
2. Laptops and Notebooks: The compact size and low power consumption make it suitable for use in portable devices, enhancing their performance and battery life.
3. Servers and Data Centers: The MT53D1G64D8NZ-046 WT ES:E TR is utilized in server systems to handle large amounts of data and ensure smooth operation.
4. Networking Equipment: It is employed in networking devices like routers and switches to facilitate efficient data processing and communication.

Detailed and Complete Alternative Models