MT53D1G64D8NW-046 WT ES:E

Product Overview

Category

The MT53D1G64D8NW-046 WT ES:E belongs to the category of computer memory modules.

Use

This product is primarily used as a RAM (Random Access Memory) module in computers and other electronic devices.

Characteristics

• Capacity: 1GB
• Technology: DDR3 SDRAM
• Speed: 1600MHz
• Form Factor: DIMM 240-pin
• Voltage: 1.5V
• Error Checking: Non-ECC
• CAS Latency: CL11
• Package Type: FBGA (Fine-pitch Ball Grid Array)
• Operating Temperature: 0°C to 85°C

Packaging/Quantity

The MT53D1G64D8NW-046 WT ES:E is typically packaged individually in an anti-static bag. It is sold as a single unit.

Specifications

• Memory Type: DDR3 SDRAM
• Module Type: Unbuffered DIMM
• Memory Speed: PC3-12800 (1600MHz)
• Memory Size: 1GB
• Data Integrity Check: Non-ECC
• CAS Latency: CL11
• Pins: 240
• Voltage: 1.5V
• Form Factor: DIMM 240-pin
• Operating Temperature: 0°C to 85°C

Detailed Pin Configuration

The MT53D1G64D8NW-046 WT ES:E follows the standard pin configuration for DDR3 DIMM modules. The 240 pins are arranged in a specific order to ensure proper connectivity with the motherboard. Please refer to the product datasheet for the detailed pin configuration diagram.

Functional Features

• High-speed data transfer rate of 1600MHz.
• Low operating voltage of 1.5V, reducing power consumption.
• Non-ECC design for cost-effective memory solutions.
• Compact form factor for easy installation in various systems.
• Reliable performance and compatibility with DDR3-compatible devices.

Advantages

• Fast data transfer rate enhances overall system performance.
• Low voltage operation reduces power consumption and heat generation.
• Non-ECC design provides a cost-effective solution for non-critical applications.
• Easy installation due to the compact form factor.
• Wide compatibility with DDR3-compatible devices ensures versatility.

Disadvantages

• Limited capacity of 1GB may not be sufficient for memory-intensive tasks.
• Non-ECC design lacks error correction capabilities, making it unsuitable for critical applications.
• The module's speed may not be compatible with older systems that support lower memory speeds.

Working Principles

The MT53D1G64D8NW-046 WT ES:E operates based on DDR3 SDRAM technology. It stores data in an array of capacitors within the module. When the computer or device requires access to specific data, the memory controller sends a signal to retrieve the stored information from the appropriate capacitor. The high-speed data transfer rate allows for quick retrieval and processing of data.

Detailed Application Field Plans

The MT53D1G64D8NW-046 WT ES:E is commonly used in various computing applications, including:

1. Desktop Computers: Provides additional memory capacity for multitasking and running resource-intensive applications.
2. Laptops: Enhances system performance and enables smooth multitasking.
3. Workstations: Supports demanding tasks such as video editing, 3D rendering, and scientific simulations.
4. Servers: Used as primary or secondary memory for efficient data processing and storage.
5. Gaming Systems: Improves gaming performance by providing faster data access and smoother gameplay.

Detailed and Complete Alternative Models

1. MT53D512M8D4NQ-046 WT ES:E: 512MB DDR3 SDRAM module with similar specifications.
2. MT53D2G64D8HN-046 WT ES:E: 2GB DDR3 SDRAM module with higher capacity.
3. MT53D4G64D8HN-046 WT ES:E: 4GB DDR3 SDRAM module with even higher capacity.

These alternative models offer different capacities to suit various memory requirements.

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