MT53D1024M64D8NW-046 WT ES:D

Basic Information Overview

• Category: Memory Module
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Low power consumption
• Package: Integrated circuit (IC)
• Essence: Non-volatile memory module
• Packaging/Quantity: Single unit

Specifications

• Model: MT53D1024M64D8NW-046 WT ES:D
• Capacity: 1,024 megabytes (MB)
• Organization: 64 megabits (Mb) x 64 bits (b)
• Interface: DDR3 SDRAM
• Operating Voltage: 1.5 volts (V)
• Clock Frequency: 800 megahertz (MHz)
• Latency: CL11
• Form Factor: 240-pin DIMM
• Operating Temperature: -40 to 85 degrees Celsius

Detailed Pin Configuration

The MT53D1024M64D8NW-046 WT ES:D memory module has a total of 240 pins. These pins are arranged in a specific configuration to facilitate proper connection with the host device. The pin configuration is as follows:

• Pin 1: VSS (Ground)
• Pin 2: DQ0 (Data Input/Output Bit 0)
• Pin 3: DQ1 (Data Input/Output Bit 1)
• ...
• Pin 239: VDD (Power Supply)
• Pin 240: VSS (Ground)

Functional Features

• High-speed data transfer: The MT53D1024M64D8NW-046 WT ES:D offers fast data transfer rates, allowing for efficient read and write operations.
• Low power consumption: This memory module is designed to consume minimal power, making it suitable for battery-powered devices.
• Reliable data storage: The non-volatile nature of the memory ensures that data is retained even when power is disconnected.
• Error correction: The module incorporates error correction techniques to enhance data integrity and reliability.

Advantages and Disadvantages

Advantages: - High capacity for storing large amounts of data - Fast data transfer rate for quick access to stored information - Low power consumption, ideal for energy-efficient devices - Non-volatile memory retains data even without power

Disadvantages: - Limited compatibility with older devices that do not support DDR3 SDRAM interface - Relatively higher cost compared to lower-capacity memory modules

Working Principles

The MT53D1024M64D8NW-046 WT ES:D memory module operates based on DDR3 SDRAM technology. It stores data in an array of capacitors, where each capacitor represents a single bit of information. The module uses a clock signal to synchronize data transfer between the memory and the host device. When the host device requests data, the memory module retrieves it from the capacitors and transfers it to the device. Similarly, when the host device writes data, the module stores it in the capacitors.

Detailed Application Field Plans

The MT53D1024M64D8NW-046 WT ES:D memory module finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Gaming consoles - Networking equipment - Industrial automation systems

Detailed and Complete Alternative Models

1. MT53B512M32D2NP-046 WT ES:D

   • Capacity: 512 megabytes (MB)
   • Organization: 32 megabits (Mb) x 32 bits (b)
   • Interface: DDR2 SDRAM
   • Clock Frequency: 667 megahertz (MHz)

2. MT53E256M32D2NP-046 WT ES:D

   • Capacity: 256 megabytes (MB)
   • Organization: 32 megabits (Mb) x 32 bits (b)
   • Interface: DDR2 SDRAM
   • Clock Frequency: 667 megahertz (MHz)

3. MT53C128M32D2NP-046 WT ES:D

   • Capacity: 128 megabytes (MB)
   • Organization: 32 megabits (Mb) x 32 bits (b)
   • Interface: DDR2 SDRAM
   • Clock Frequency: 667 megahertz (MHz)

These alternative models offer different capacities and clock frequencies, providing options for various memory requirements.

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