MT53B384M64D4NK-053 WT ES:A

Product Overview

Category

MT53B384M64D4NK-053 WT ES:A belongs to the category of electronic memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic devices such as computers, smartphones, and tablets.

Characteristics

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Compact size

Package

MT53B384M64D4NK-053 WT ES:A is packaged in a small, rectangular integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

MT53B384M64D4NK-053 WT ES:A is typically sold in bulk packaging, with each package containing a specific quantity of units. The exact quantity may vary depending on the manufacturer or supplier.

Specifications

• Model: MT53B384M64D4NK-053 WT ES:A
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 384 megabytes (MB)
• Data Bus Width: 64 bits
• Operating Voltage: 1.2 volts
• Clock Frequency: 533 megahertz (MHz)
• Refresh Rate: 8K cycles per 32 milliseconds (ms)

Detailed Pin Configuration

The pin configuration of MT53B384M64D4NK-053 WT ES:A is as follows:

1. VDD - Power supply voltage
2. DQ0-DQ63 - Data input/output pins
3. A0-A13 - Address input pins
4. BA0-BA1 - Bank address pins
5. RAS - Row address strobe
6. CAS - Column address strobe
7. WE - Write enable
8. CK - Clock input
9. CKE - Clock enable
10. CS - Chip select
11. DM0-DM7 - Data mask pins
12. VSS - Ground

Functional Features

• High-speed data access and transfer
• Support for advanced memory management techniques
• Error correction capabilities
• Low power consumption in standby mode
• Compatibility with various operating systems and platforms

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Low power consumption
• Compact size
• Compatibility with different devices and platforms

Disadvantages

• Relatively higher cost compared to other memory technologies
• Susceptible to data loss in case of power failure

Working Principles

MT53B384M64D4NK-053 WT ES:A operates based on the principles of dynamic random access memory (DRAM). It stores digital information in a matrix of capacitors, where each capacitor represents a single bit of data. The stored information needs to be periodically refreshed to maintain its integrity.

When a read or write operation is initiated, the memory controller sends the appropriate address and control signals to access the desired location in the memory array. The data is then transferred between the memory cells and the external device through the data bus.

Detailed Application Field Plans

MT53B384M64D4NK-053 WT ES:A finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Embedded systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT53B384M64D4NK-053 WT ES:A include: - MT53B256M32D2NK-053 WT ES:A - MT53B512M128D8NK-053 WT ES:A - MT53B1024M256D16NK-053 WT ES:A

These alternative models differ in terms of capacity, data bus width, and other specifications, providing options to suit different requirements.

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