MT53B384M64D4NH-062 WT ES:B

Basic Information Overview

Category: Memory Module
Use: Data storage and retrieval
Characteristics: High capacity, fast data transfer rate
Package: DIMM (Dual In-Line Memory Module)
Essence: Non-volatile memory for storing and accessing data
Packaging/Quantity: Individually packaged, single unit

Specifications

• Model: MT53B384M64D4NH-062 WT ES:B
• Capacity: 384MB
• Type: DDR4 SDRAM
• Speed: 2666MHz
• Voltage: 1.2V
• Form Factor: 288-pin DIMM
• Error Correction: Non-ECC
• CAS Latency: CL19
• Refresh Rate: 8K cycles/32ms

Detailed Pin Configuration

The MT53B384M64D4NH-062 WT ES:B memory module has a total of 288 pins arranged in a specific configuration. The pinout diagram is as follows:

[Pin Diagram]

Functional Features

• High-speed data transfer: The DDR4 SDRAM technology allows for faster data transfer rates, resulting in improved system performance.
• Non-volatile memory: The memory module retains stored data even when power is removed, ensuring data integrity and reliability.
• Low power consumption: Operating at a voltage of 1.2V, the module consumes less power, contributing to energy efficiency.
• Plug-and-play installation: The DIMM form factor enables easy installation into compatible systems without the need for complex configurations.

Advantages and Disadvantages

Advantages: - High capacity: With a capacity of 384MB, the module can store a significant amount of data. - Fast data transfer rate: The 2666MHz speed ensures quick access to stored information. - Reliable performance: The non-volatile memory and error correction features enhance data integrity and system stability.

Disadvantages: - Limited capacity: Compared to higher-capacity memory modules, the 384MB capacity may be insufficient for certain applications. - Higher cost per gigabyte: Due to its lower capacity, the cost per gigabyte of storage may be relatively higher compared to larger modules.

Working Principles

The MT53B384M64D4NH-062 WT ES:B memory module operates based on DDR4 SDRAM technology. It stores data in an array of capacitors, with each capacitor representing a single bit of information. The module uses a clock signal to synchronize data transfer between the memory and the system's processor. When the processor requests data, the memory module retrieves it and transfers it back to the processor at high speeds.

Detailed Application Field Plans

The MT53B384M64D4NH-062 WT ES:B memory module is suitable for various applications that require reliable data storage and retrieval. Some potential application fields include:

1. Personal Computers: Enhancing the performance of desktop computers by providing additional memory for running multiple applications simultaneously.
2. Servers: Supporting data-intensive tasks in server environments, such as database management and virtualization.
3. Workstations: Enabling efficient handling of complex tasks in graphic design, video editing, and 3D modeling.
4. Embedded Systems: Facilitating data storage and processing in embedded systems used in industrial automation, medical devices, and IoT applications.

Detailed and Complete Alternative Models

1. MT53B256M32D2NP-062 WT ES:B: A similar memory module with a capacity of 256MB and DDR2 SDRAM technology.
2. MT53B512M128D4NP-062 WT ES:B: A higher-capacity memory module with 512MB capacity and DDR4 SDRAM technology.
3. MT53B768M64D4NP-062 WT ES:B: A memory module with 768MB capacity and DDR4 SDRAM technology.

These alternative models offer different capacities and specifications to cater to various system requirements.

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