MT53B1G32D4NQ-062 WT ES:D TR

Product Overview

Category: Memory Module
Use: Data storage and retrieval
Characteristics: High capacity, fast data transfer rate
Package: DIMM (Dual In-Line Memory Module)
Essence: Non-volatile memory for storing and accessing data
Packaging/Quantity: Individually packaged, one unit per package

Specifications

• Model: MT53B1G32D4NQ-062 WT ES:D TR
• Capacity: 1 Gigabyte (GB)
• Type: DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory)
• Speed: 2666 Megahertz (MHz)
• Voltage: 1.2 Volts (V)
• Form Factor: 288-pin DIMM
• Error Correction: ECC (Error Correcting Code)
• Operating Temperature: 0°C to 85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT53B1G32D4NQ-062 WT ES:D TR memory module has a total of 288 pins arranged in a specific configuration. The pinout diagram is as follows:

Functional Features

• High-speed data transfer: The DDR4 SDRAM technology allows for faster data transfer rates, resulting in improved system performance.
• Error correction capability: The ECC feature helps detect and correct errors in data, ensuring data integrity and reliability.
• Low power consumption: The memory module operates at a voltage of 1.2V, reducing power consumption and heat generation.
• High capacity: With a capacity of 1GB, the module can store a large amount of data.

Advantages and Disadvantages

Advantages: - Fast data transfer rate - Error correction capability - High capacity for data storage

Disadvantages: - Relatively higher cost compared to lower-capacity memory modules - Requires compatible hardware and motherboard support

Working Principles

The MT53B1G32D4NQ-062 WT ES:D TR memory module works based on DDR4 SDRAM technology. It stores data in an array of capacitors, which are organized into rows and columns. The module communicates with the computer's processor through a memory controller, enabling data read and write operations.

During operation, the memory module receives commands from the processor to access specific data stored within its cells. The data is transferred in parallel between the memory module and the processor, utilizing the high-speed data transfer capabilities of DDR4 SDRAM.

Detailed Application Field Plans

The MT53B1G32D4NQ-062 WT ES:D TR memory module is commonly used in various computing applications that require high-speed data storage and retrieval. Some of the application fields where this module finds utility include:

1. Servers and Data Centers: The high capacity and fast data transfer rate make it suitable for use in servers and data centers, where large amounts of data need to be processed quickly.
2. Workstations: Workstations used for tasks such as video editing, 3D rendering, and scientific simulations benefit from the module's high performance and capacity.
3. Gaming Systems: Gaming enthusiasts can enhance their gaming experience by using this memory module, which allows for faster loading times and smoother gameplay.
4. High-Performance Computing: Applications involving complex calculations and simulations, such as scientific research and financial modeling, can benefit from the module's capabilities.

Detailed and Complete Alternative Models

1. MT53B1G32D4NQ-062 WT ES:D TR (1GB)
2. MT53B2G32D4NQ-062 WT ES:D TR (2GB)
3. MT53B4G32D4NQ-062 WT ES:D TR (4GB)
4. MT53B8G32D4NQ-062 WT ES:D TR (8GB)

These alternative models offer higher capacities while maintaining similar specifications and features as the MT53B1G32D4NQ-062 WT ES:D TR.

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