MT53B1024M32D4NQ-062 WT ES:C

Product Overview

Category

The MT53B1024M32D4NQ-062 WT ES:C belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

The MT53B1024M32D4NQ-062 WT ES:C is packaged in a compact and durable casing, ensuring protection against external factors such as moisture and physical damage.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

Each package of the MT53B1024M32D4NQ-062 WT ES:C contains a single unit of the product.

Specifications

• Model: MT53B1024M32D4NQ-062 WT ES:C
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 1 gigabyte (GB)
• Organization: 1024 Megabits x 32 bits
• Speed: 1600 megahertz (MHz)
• Voltage: 1.35 volts (V)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT53B1024M32D4NQ-062 WT ES:C has a specific pin configuration that enables proper connectivity and functionality within electronic devices. Please refer to the product datasheet for detailed pin diagrams and descriptions.

Functional Features

• High-speed data transfer rate
• Low latency
• Error correction capabilities
• Self-refresh mode for power-saving
• Multiple bank architecture for efficient data access

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Reliable performance
• Compact package size

Disadvantages

• Relatively higher cost compared to other memory options
• Sensitive to electrical interference

Working Principles

The MT53B1024M32D4NQ-062 WT ES:C operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. When data is requested, it is accessed by reading the charge stored in the capacitors.

Detailed Application Field Plans

The MT53B1024M32D4NQ-062 WT ES:C finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

1. MT53B512M32D2NQ-062 WT ES:C

   • Capacity: 512 megabits x 32 bits
   • Speed: 1600 MHz
   • Voltage: 1.35 V

2. MT53B2048M32D8NQ-062 WT ES:C

   • Capacity: 2 gigabits x 32 bits
   • Speed: 1600 MHz
   • Voltage: 1.35 V

3. MT53B4096M32D16NQ-062 WT ES:C

   • Capacity: 4 gigabits x 32 bits
   • Speed: 1600 MHz
   • Voltage: 1.35 V

Please note that these alternative models may have different specifications and capacities, catering to diverse requirements.

In conclusion, the MT53B1024M32D4NQ-062 WT ES:C is a high-performance semiconductor memory product that offers fast data access, large storage capacity, and low power consumption. Its compact package size makes it suitable for various electronic devices, and it finds applications in a wide range of fields.