MT51J256M32HF-70:A

Product Overview

Category

MT51J256M32HF-70:A belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High storage capacity: The MT51J256M32HF-70:A offers a large storage capacity, allowing for the storage of a significant amount of data.
• Fast data access: With its high-speed data access capabilities, this product ensures quick retrieval and transfer of information.
• Low power consumption: The MT51J256M32HF-70:A is designed to consume minimal power, making it energy-efficient.
• Compact package: This product comes in a compact package, enabling easy integration into various electronic devices.
• Reliable performance: It provides reliable and stable performance, ensuring the integrity and security of stored data.

Package and Quantity

The MT51J256M32HF-70:A is typically packaged in a small form factor, such as a surface-mount technology (SMT) package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: MT51J256M32HF-70:A
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 256 megabits (32 megabytes)
• Operating Voltage: 1.8V
• Speed: 70 nanoseconds (ns)
• Interface: Double Data Rate 3 (DDR3)
• Pin Count: 96 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT51J256M32HF-70:A has a total of 96 pins arranged in a specific configuration. The pinout diagram below illustrates the detailed pin configuration:

Functional Features

• High-speed data transfer: The MT51J256M32HF-70:A supports high-speed data transfer rates, allowing for efficient data processing.
• Refresh mechanism: It incorporates a refresh mechanism to maintain the integrity of stored data over time.
• Error correction: This product includes error correction capabilities to detect and correct data errors, ensuring data reliability.
• Low latency: With its low latency design, the MT51J256M32HF-70:A minimizes delays in accessing stored data.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data access
• Low power consumption
• Compact package
• Reliable performance

Disadvantages

• Relatively higher cost compared to other memory technologies
• Sensitive to electrical noise and interference

Working Principles

The MT51J256M32HF-70:A operates based on the principles of dynamic random access memory (DRAM). It stores data as electrical charges in tiny capacitors within the memory cells. To retain the data, these capacitors need to be periodically refreshed. When data is accessed, it is read from or written to the appropriate memory cells using row and column addressing techniques.

Detailed Application Field Plans

The MT51J256M32HF-70:A finds applications in various electronic devices that require high-capacity and fast-access memory. Some potential application fields include: - Personal computers - Laptops and notebooks - Servers and data centers - Mobile devices (smartphones, tablets) - Gaming consoles - Networking equipment

Alternative Models

For users seeking alternative options, the following models can be considered: - MT51J128M32DQ-10:A - MT51J512M32HF-80:B - MT51J256M32HF-70:C - MT51J256M32HF-70:D

These models offer similar specifications and functionality, providing users with flexibility in choosing the most suitable option for their specific requirements.

In conclusion, the MT51J256M32HF-70:A is a high-capacity and fast-access semiconductor memory device primarily used for data storage in various electronic devices. With its reliable performance, compact package, and energy-efficient design, it serves as a crucial component in modern computing systems.

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