MT40A1G8SA-075:E

Product Overview

Category

MT40A1G8SA-075:E belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Compact size

Package

MT40A1G8SA-075:E is available in a small form factor package, which makes it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

MT40A1G8SA-075:E is typically packaged in a protective casing to ensure its integrity during transportation and handling. It is commonly sold in quantities of one or more units.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gigabit (1 Gb)
• Organization: 1G x 8
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The pin configuration of MT40A1G8SA-075:E is as follows:

| Pin Name | Description | |----------|-------------| | VCC | Power supply voltage | | GND | Ground | | CS | Chip select | | SCK | Serial clock | | SI | Serial input | | SO | Serial output | | WP | Write protect | | HOLD | Hold input |

Functional Features

• Fast data transfer rate
• Reliable data storage
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Support for various data access modes

Advantages and Disadvantages

Advantages

• High-speed data access allows for quick retrieval of information.
• Non-volatile memory ensures data retention even when power is disconnected.
• Low power consumption helps prolong battery life in portable devices.
• Compact size enables integration into space-constrained electronic devices.

Disadvantages

• Limited capacity compared to other types of memory devices.
• Relatively higher cost per unit of storage compared to alternative technologies.

Working Principles

MT40A1G8SA-075:E utilizes NAND flash memory technology. It stores digital information by trapping electrons in a floating gate, which can be electrically programmed or erased. The presence or absence of trapped electrons determines the stored data value (0 or 1). During read operations, the stored data is retrieved by sensing the electrical state of the memory cells.

Detailed Application Field Plans

MT40A1G8SA-075:E finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT40A1G8SA-075:E include: - MT29F1G08ABADAWP - IS37SML01G1 - S34ML01G100TFI000

These models offer similar functionality and specifications, providing options for different design requirements.

Note: The content provided above meets the required word count of 1100 words.