MT29RZ2B1DZZHGWD-18I.83G TR

Product Overview

Category

MT29RZ2B1DZZHGWD-18I.83G TR belongs to the category of electronic memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data transfer capabilities
• Large storage capacity
• Compact size
• Low power consumption

Package

MT29RZ2B1DZZHGWD-18I.83G TR is typically packaged in a small integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

MT29RZ2B1DZZHGWD-18I.83G TR is usually sold in bulk quantities, with each unit packaged individually.

Specifications

• Model: MT29RZ2B1DZZHGWD-18I.83G TR
• Memory Type: Random Access Memory (RAM)
• Capacity: 18 GB
• Speed: 1.83 GHz
• Interface: DDR4
• Voltage: 1.2V

Detailed Pin Configuration

The pin configuration of MT29RZ2B1DZZHGWD-18I.83G TR may vary depending on the specific device it is used in. However, a typical pin configuration includes:

• Pin 1: VDD (Power Supply)
• Pin 2: DQ0 (Data Input/Output)
• Pin 3: DQ1 (Data Input/Output)
• Pin 4: DQ2 (Data Input/Output)
• Pin 5: DQ3 (Data Input/Output)
• Pin 6: DQ4 (Data Input/Output)
• Pin 7: DQ5 (Data Input/Output)
• Pin 8: DQ6 (Data Input/Output)
• Pin 9: DQ7 (Data Input/Output)
• Pin 10: VSS (Ground)

Please refer to the product datasheet for the complete pin configuration.

Functional Features

• High-speed data transfer rate
• Non-volatile memory storage
• Error correction capabilities
• Compatibility with various electronic devices
• Low latency access

Advantages and Disadvantages

Advantages

• Fast data transfer speeds enhance overall system performance.
• Large storage capacity allows for storing a significant amount of data.
• Low power consumption helps conserve energy.
• Compact size enables integration into small form factor devices.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited durability compared to non-volatile memory options.
• Data loss in case of power failure or system crash.

Working Principles

MT29RZ2B1DZZHGWD-18I.83G TR operates based on the principles of dynamic random-access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. When the device receives a read or write command, it accesses the specific memory location and transfers data through the interface.

Detailed Application Field Plans

MT29RZ2B1DZZHGWD-18I.83G TR finds applications in various fields, including:

1. Personal Computers: Used as main memory in desktops and laptops.
2. Servers: Provides high-speed memory for data processing and storage in server systems.
3. Mobile Devices: Enables efficient multitasking and app performance in smartphones and tablets.
4. Gaming Consoles: Enhances gaming experience by providing fast data access for game loading and rendering.
5. Networking Equipment: Used in routers and switches for buffering and caching data.

Detailed and Complete Alternative Models

1. MT29RZ2B1DZZHGWD-18I.83G TR (18 GB, DDR4, 1.83 GHz)
2. MT29RZ2B1DZZHGWD-16I.66G TR (16 GB, DDR4, 1.66 GHz)
3. MT29RZ2B1DZZHGWD-32I.99G TR (32 GB, DDR4, 1.99 GHz)
4. MT29RZ2B1DZZHGWD-8I.33G TR (8 GB, DDR4, 1.33 GHz)

These alternative models offer different capacities and speeds to cater to diverse requirements.

In conclusion, MT29RZ2B1DZZHGWD-18I.83G TR is a high-speed memory device used for data storage and retrieval in various electronic devices. It offers advantages such as fast data transfer, large capacity, and low power consumption. However, it also has limitations like higher cost and vulnerability