MT29F8G16ADBDAH4-AIT:D

Product Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast read/write speeds
Package: Integrated circuit (IC)
Essence: Non-volatile memory for electronic devices
Packaging/Quantity: Individual ICs in anti-static packaging

Specifications

• Model: MT29F8G16ADBDAH4-AIT:D
• Capacity: 8 Gigabytes (GB)
• Interface: Parallel NAND Flash
• Voltage: 3.3 Volts (V)
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 Megabytes per second (MB/s)
• Endurance: 100,000 Program/Erase cycles
• Package Type: 48-ball TFBGA (Thin Fine-Pitch Ball Grid Array)

Detailed Pin Configuration

The MT29F8G16ADBDAH4-AIT:D features a 48-ball TFBGA package with the following pin configuration:

1. VCCQ: Power supply for I/O pins
2. NC: No connection
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output
5. WE#: Write Enable
6. RE#: Read Enable
7. CLE: Command Latch Enable
8. ALE: Address Latch Enable
9. CE#: Chip Enable
10. R/B#: Ready/Busy status
11. WP#: Write Protect
12. VCC: Power supply
13. GND: Ground

(Note: The pin configuration may vary depending on the specific package variant.)

Functional Features

• High-speed data transfer for efficient read/write operations
• Reliable non-volatile memory for data storage
• Low power consumption for extended battery life
• Built-in error correction and detection mechanisms
• Support for various operating systems and file systems
• Enhanced security features to protect stored data

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Wide operating temperature range - High endurance for prolonged usage - Compact package size for space-constrained designs

Disadvantages: - Relatively higher cost compared to other memory options - Limited compatibility with certain legacy systems

Working Principles

The MT29F8G16ADBDAH4-AIT:D utilizes NAND flash memory technology to store and retrieve digital data. It employs a parallel interface for efficient data transfer between the memory device and the host system. When data is written, it is stored in memory cells within the device. During read operations, the stored data is retrieved and transferred back to the host system. The device incorporates error correction and detection techniques to ensure data integrity.

Detailed Application Field Plans

The MT29F8G16ADBDAH4-AIT:D is widely used in various electronic devices that require non-volatile data storage, such as:

1. Solid-State Drives (SSDs)
2. Digital Cameras
3. Mobile Phones
4. Tablets
5. Industrial Control Systems
6. Automotive Infotainment Systems
7. Gaming Consoles
8. Embedded Systems

Its high capacity, fast read/write speeds, and reliability make it suitable for applications where large amounts of data need to be stored and accessed quickly.

Detailed and Complete Alternative Models

1. MT29F8G08ABABA: 8GB NAND Flash Memory, BGA Package
2. MT29F8G16ABACAH4: 8GB NAND Flash Memory, TSOP Package
3. MT29F8G08ABADA: 8GB NAND Flash Memory, LGA Package
4. MT29F8G16ABDCAH4: 8GB NAND Flash Memory, WSON Package

(Note: The alternative models listed above are similar in capacity and functionality but may have different package types or pin configurations.)

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