MT29F8G08ABABAWP-IT:B TR

Product Overview

Category

MT29F8G08ABABAWP-IT:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F8G08ABABAWP-IT:B TR offers a storage capacity of 8 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F8G08ABABAWP-IT:B TR comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F8G08ABABAWP-IT:B TR NAND flash memory is typically packaged in small surface-mount packages. The exact packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Storage Capacity: 8 GB
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of MT29F8G08ABABAWP-IT:B TR is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. R/B#
8. WP#
9. NC
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Read/Program/Erase Operations: MT29F8G08ABABAWP-IT:B TR supports efficient read, program, and erase operations at the page level.
• Block Management: The NAND flash memory incorporates advanced block management techniques to ensure optimal performance and longevity.
• Error Correction: It utilizes error correction codes (ECC) to detect and correct data errors, enhancing data integrity.
• Wear-Leveling: The product employs wear-leveling algorithms to distribute write operations evenly across memory blocks, extending its lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance with advanced error correction techniques.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates easy integration into electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of memory.

Working Principles

MT29F8G08ABABAWP-IT:B TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. The data is stored by trapping electric charges in the floating gate of the memory cell. These charges represent binary values (0 or 1). The state of the charge determines the stored data.

During read operations, the controller applies appropriate voltages to the memory cells and measures the resulting current flow to determine the stored data. Program and erase operations involve applying specific voltage levels to modify the charge trapped in the floating gate, allowing for data programming or erasure.

Detailed Application Field Plans

MT29F8G08ABABAWP-IT:B TR finds extensive application in various electronic devices that require non-volatile storage. Some of the key application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Enables storage of high-resolution photos and videos.
3. Solid-state drives (SSDs): Provides high-speed and reliable storage for computer systems.
4. Automotive electronics: Used for data storage in infotainment