MT29F768G08EEHBBJ4-3RES:B TR

Product Overview

Category

MT29F768G08EEHBBJ4-3RES:B TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F768G08EEHBBJ4-3RES:B TR offers a large storage capacity of 768 gigabits (96 gigabytes).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F768G08EEHBBJ4-3RES:B TR is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 768 gigabits (96 gigabytes)
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Endurance: Up to 10,000 program/erase cycles

Detailed Pin Configuration

The MT29F768G08EEHBBJ4-3RES:B TR has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE: Chip enable
4. CLE: Command latch enable
5. ALE: Address latch enable
6. RE: Read enable
7. WE: Write enable
8. R/B: Ready/Busy status
9. DQ0-DQ7: Data input/output lines
10. WP: Write protect

Functional Features

• High-speed data transfer: The MT29F768G08EEHBBJ4-3RES:B TR offers fast read and write operations, allowing for efficient data storage and retrieval.
• Error correction: Advanced error correction techniques ensure reliable data integrity, minimizing the risk of data loss or corruption.
• Wear leveling: The product incorporates wear leveling algorithms to evenly distribute program/erase cycles across memory cells, extending the lifespan of the NAND flash memory.
• Bad block management: It includes mechanisms to identify and manage bad blocks, ensuring optimal performance and preventing data loss.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per gigabyte compared to traditional hard disk drives (HDDs)

Working Principles

The MT29F768G08EEHBBJ4-3RES:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. Writing involves applying a specific voltage to modify the charge level.

Detailed Application Field Plans

The MT29F768G08EEHBBJ4-3RES:B TR is widely used in various electronic devices that require high-capacity and reliable data storage. Some of the application fields where this product finds extensive usage include:

1. Smartphones and tablets: The NAND flash memory provides ample storage for apps, media files, and user data.
2. Digital cameras: It enables storing a large number of high-resolution photos and videos.
3. Solid-state drives (SSDs): The MT29F768G08EEHBBJ4-3RES:B TR serves as the primary storage medium in SSDs, offering fast boot times and improved system responsiveness.

Detailed and Complete Alternative Models

1. MT29F768G08EBBDAH4-3R:A TR
2. MT29F768G08EBBDAH4-3R:B TR
3. MT29F768G08EBBDAH4-3R:C TR
4. MT29F768G08EBBDAH4-3R:D TR
5. MT29F768G08EBBDAH4-3R