MT29F768G08EECBBJ4-37ES:B TR

Product Overview

Category

MT29F768G08EECBBJ4-37ES:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F768G08EECBBJ4-37ES:B TR offers a storage capacity of 768 gigabits (96 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F768G08EECBBJ4-37ES:B TR is energy-efficient, consuming minimal power during operation, which is beneficial for battery-powered devices.
• Compact package: This NAND flash memory comes in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F768G08EECBBJ4-37ES:B TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on the customer's requirements.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F768G08EECBBJ4-37ES:B TR
• Memory Type: NAND Flash
• Storage Capacity: 768 gigabits (96 gigabytes)
• Interface: Universal Flash Storage (UFS)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to 85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

The MT29F768G08EECBBJ4-37ES:B TR has a total of 48 pins. The pin configuration is as follows:

1. VCCQ
2. VCC
3. NC
4. NC
5. ALE
6. CLE
7. RE#
8. WE#
9. WP#
10. R/B#
11. CE#
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Program Operation: The MT29F768G08EECBBJ4-37ES:B TR supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: This NAND flash memory enables block erase operations, which erase a large amount of data simultaneously.
• Read Operation: The product provides fast and reliable read operations, allowing quick access to stored data.
• Wear-Leveling Algorithm: The MT29F768G08EECBBJ4-37ES:B TR incorporates a wear-leveling algorithm that evenly distributes write and erase cycles across memory blocks, enhancing the product's lifespan.
• Error Correction Code (ECC): This NAND flash memory utilizes ECC to detect and correct errors that may occur during data transfer, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance ensures data integrity and durability.
• Low power consumption is beneficial for battery-powered devices.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• The high storage capacity may result in a higher cost compared to lower-capacity alternatives.
• Limited compatibility with certain older devices that do not support UFS interface.

Working Principles

The MT29F768G08EECBBJ4-37ES:B TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. These cells are organized into pages and blocks, allowing for efficient read, write, and erase operations. When data is written, it is stored by applying electrical charges to specific memory cells. During read operations, the