Micron Technology Inc.
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MT29F6T08ETHBBM5-3R:B TR

MT29F6T08ETHBBM5-3R:B TR

Product Overview

Category

MT29F6T08ETHBBM5-3R:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High-speed data transfer
  • Non-volatile memory
  • Large storage capacity
  • Compact size
  • Low power consumption

Package

MT29F6T08ETHBBM5-3R:B TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

MT29F6T08ETHBBM5-3R:B TR is typically packaged in trays or reels, with each package containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: NAND Flash
  • Capacity: 8GB
  • Interface: Toggle Mode 2.0
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Transfer Rate: Up to 400Mbps
  • Erase/Program Cycle Endurance: 100,000 cycles

Detailed Pin Configuration

  1. VCC: Power supply voltage
  2. GND: Ground
  3. CE: Chip Enable
  4. CLE: Command Latch Enable
  5. ALE: Address Latch Enable
  6. RE: Read Enable
  7. WE: Write Enable
  8. R/B: Ready/Busy
  9. DQ0-DQ7: Data Input/Output

Functional Features

  • High-speed read and write operations
  • Error correction capability
  • Wear-leveling algorithm for extended lifespan
  • Bad block management
  • Block erase and page program operations

Advantages

  • Large storage capacity allows for storing a vast amount of data
  • High-speed data transfer enables quick access to stored information
  • Low power consumption prolongs battery life in portable devices
  • Compact size facilitates integration into small form factor devices

Disadvantages

  • Limited endurance due to the finite number of erase/program cycles
  • Relatively higher cost compared to other types of memory
  • Susceptible to data loss in case of power failure during write operations

Working Principles

MT29F6T08ETHBBM5-3R:B TR utilizes NAND flash technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. The data is accessed by applying appropriate voltages to the control pins and reading or writing the stored charge.

Detailed Application Field Plans

MT29F6T08ETHBBM5-3R:B TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

  1. MT29F8G08ABABA: 8GB NAND Flash Memory with similar specifications.
  2. S34ML08G101TFI000: 8GB NAND Flash Memory from a different manufacturer.
  3. H27UCG8T2BTR: 8GB NAND Flash Memory with different interface options.

Note: These alternative models are provided as examples and may have variations in specifications and pin configuration.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F6T08ETHBBM5-3R:B TR v technických řešeních

1. What is the MT29F6T08ETHBBM5-3R:B TR?

The MT29F6T08ETHBBM5-3R:B TR is a specific model of NAND flash memory chip manufactured by Micron Technology. It is commonly used in various technical solutions that require non-volatile storage.

2. What is the capacity of the MT29F6T08ETHBBM5-3R:B TR?

The MT29F6T08ETHBBM5-3R:B TR has a capacity of 8 gigabytes (GB). This means it can store up to 8 billion bytes of data.

3. What is the interface of the MT29F6T08ETHBBM5-3R:B TR?

The MT29F6T08ETHBBM5-3R:B TR uses a standard NAND flash interface, which is commonly referred to as ONFI (Open NAND Flash Interface).

4. What is the operating voltage range of the MT29F6T08ETHBBM5-3R:B TR?

The MT29F6T08ETHBBM5-3R:B TR operates within a voltage range of 2.7V to 3.6V. It is important to ensure that the power supply meets this requirement for proper functionality.

5. What is the maximum read speed of the MT29F6T08ETHBBM5-3R:B TR?

The MT29F6T08ETHBBM5-3R:B TR has a maximum read speed of 50 megabytes per second (MB/s). This refers to the rate at which data can be read from the memory chip.

6. What is the maximum write speed of the MT29F6T08ETHBBM5-3R:B TR?

The MT29F6T08ETHBBM5-3R:B TR has a maximum write speed of 20 megabytes per second (MB/s). This refers to the rate at which data can be written to the memory chip.

7. Is the MT29F6T08ETHBBM5-3R:B TR compatible with other NAND flash memory chips?

Yes, the MT29F6T08ETHBBM5-3R:B TR is designed to be compatible with other NAND flash memory chips that adhere to the ONFI standard. This allows for easy integration into existing systems.

8. Can the MT29F6T08ETHBBM5-3R:B TR withstand harsh environmental conditions?

The MT29F6T08ETHBBM5-3R:B TR is designed to operate within industrial temperature ranges, typically from -40°C to +85°C. This makes it suitable for use in various environments, including those with extreme temperatures.

9. Does the MT29F6T08ETHBBM5-3R:B TR support error correction codes (ECC)?

Yes, the MT29F6T08ETHBBM5-3R:B TR supports built-in hardware ECC functionality. This helps to ensure data integrity and reliability by detecting and correcting errors that may occur during read or write operations.

10. What are some common applications of the MT29F6T08ETHBBM5-3R:B TR?

The MT29F6T08ETHBBM5-3R:B TR is commonly used in various technical solutions, including but not limited to embedded systems, solid-state drives (SSDs), automotive electronics, industrial control systems, and consumer electronics such as smartphones and tablets.