MT29F6T08ETCBBM5-37ES:B TR

Product Overview

Category

MT29F6T08ETCBBM5-37ES:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

MT29F6T08ETCBBM5-37ES:B TR comes in a small form factor package, which makes it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

MT29F6T08ETCBBM5-37ES:B TR is typically packaged in trays or reels, with each package containing a specific quantity of memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 8 GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 Mbps
• Erase/Program Cycles: 10,000 cycles

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. R/B: Ready/busy status
9. WP: Write protect
10. CLE: Command latch enable
11. ALE: Address latch enable

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables erasing of large blocks of data.
• Random Access: Provides quick access to specific memory locations.
• Error Correction Code (ECC): Ensures data integrity by detecting and correcting errors during read and write operations.
• Wear Leveling: Distributes data evenly across memory cells to extend the lifespan of the NAND flash.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Compact size
• Low power consumption
• Reliable data retention
• Cost-effective compared to other storage technologies

Disadvantages

• Limited number of erase/program cycles
• Susceptible to physical damage if mishandled
• Slower write speeds compared to other types of memory

Working Principles

MT29F6T08ETCBBM5-37ES:B TR utilizes a NAND flash memory architecture, which consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data using a combination of charge levels. Data is written to and read from these cells by applying appropriate voltage levels to the control pins.

During a write operation, the memory controller sends the data along with the desired address to the NAND flash memory. The memory cells at the specified address are programmed with the new data. Reading data involves applying the correct address and retrieving the stored charge levels from the memory cells.

Detailed Application Field Plans

MT29F6T08ETCBBM5-37ES:B TR finds extensive use in various electronic devices, including: - Smartphones and tablets for storing apps, photos, and videos - Digital cameras for capturing and storing high-resolution images - Solid-state drives (SSDs) for fast and reliable data storage in computers and servers

Detailed and Complete Alternative Models

1. MT29F8G08ABABA: 8 GB NAND flash memory with similar specifications.
2. MT29F16G08CBABA: 16 GB NAND flash memory with higher capacity.
3. MT29F32G08CBABA: 32 GB NAND flash memory with even higher capacity.

These alternative models offer different storage capacities to cater to varying requirements.

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