MT29F6T08ETCBBM5-37:B TR

Product Overview

Category

MT29F6T08ETCBBM5-37:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

MT29F6T08ETCBBM5-37:B TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital data reliably and efficiently.

Packaging/Quantity

MT29F6T08ETCBBM5-37:B TR is typically packaged in trays or reels, with each package containing a specific quantity of memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 8 GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 MB/s (Read), Up to 100 MB/s (Write)

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. CLE: Command latch enable
5. ALE: Address latch enable
6. RE: Read enable
7. WE: Write enable
8. R/B: Ready/busy status
9. DQ0-DQ7: Data input/output lines
10. WP: Write protect
11. RST: Reset

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables erasing of data at the block level, improving efficiency.
• Read Operation: Facilitates fast and reliable retrieval of stored data.
• Wear-Leveling Algorithm: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High-speed data transfer enables quick access to stored information.
• Large storage capacity accommodates a wide range of data-intensive applications.
• Compact size allows for integration into space-constrained devices.
• Low power consumption prolongs battery life in portable electronic devices.

Disadvantages

• Limited endurance compared to other types of non-volatile memory.
• Susceptible to data corruption if not properly managed or protected.
• Relatively higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

MT29F6T08ETCBBM5-37:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. Writing and erasing operations involve applying specific voltage levels to modify the charge on the floating gate.

Detailed Application Field Plans

MT29F6T08ETCBBM5-37:B TR finds application in various electronic devices that require reliable and high-capacity data storage. Some potential application fields include:

1. Smartphones and tablets
2. Digital cameras and camcorders
3. Solid-state drives (SSDs)
4. Portable gaming consoles
5. Industrial control systems
6. Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F8G08ABABA
2. MT29F16G08CBABA
3. MT29F32G08CBABA
4. MT29F64G08CBABA

These alternative models offer varying capacities and features to cater to different application requirements.

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