MT29F6T08ETCBBM5-37:B

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High capacity
  • Fast read/write speeds
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Single chip in a package

Specifications

• Model: MT29F6T08ETCBBM5-37:B
• Capacity: 8 GB
• Interface: Parallel
• Voltage: 3.3V
• Speed: 37 ns
• Organization: 512M x 16
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT29F6T08ETCBBM5-37:B has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A18 | Address inputs | | 19 | DQ0-DQ15 | Data inputs/outputs | | 20 | WE# | Write enable control | | 21 | CE# | Chip enable control | | 22 | RE# | Read enable control | | 23 | CLE | Command latch enable | | 24 | ALE | Address latch enable | | 25 | WP# | Write protect control | | 26 | RY/BY# | Ready/busy status output | | 27 | NC | No connection | | 28 | GND | Ground |

Functional Features

• High-speed data transfer
• Reliable data retention
• Low power consumption
• Error correction capabilities
• Block erase and program operations

Advantages

• Large storage capacity
• Fast read/write speeds
• Compact package size
• Wide operating temperature range
• High reliability and durability

Disadvantages

• Higher cost compared to other memory technologies
• Limited write endurance
• Susceptible to data corruption in case of power failure during write operations

Working Principles

The MT29F6T08ETCBBM5-37:B is based on NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed and erased. The memory cells are organized into blocks, and each block can be independently erased or programmed.

During a read operation, the requested data is retrieved by sensing the voltage levels stored in the memory cells. Write operations involve applying high voltages to the control gates and channel regions of the selected memory cells to trap or release electrons.

Detailed Application Field Plans

The MT29F6T08ETCBBM5-37:B is widely used in various electronic devices that require non-volatile data storage, such as: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Mobile phones - Tablets - Industrial control systems

Detailed and Complete Alternative Models

• MT29F8G08ABABA
• MT29F16G08CBABA
• MT29F32G08CBABA
• MT29F64G08CBABA

These alternative models offer higher capacities while maintaining similar specifications and functionality.

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