MT29F64G08CBHGBJ4-3RES:G TR

Product Overview

Category

The MT29F64G08CBHGBJ4-3RES:G TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CBHGBJ4-3RES:G TR offers a storage capacity of 64 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity.
• Low power consumption: The MT29F64G08CBHGBJ4-3RES:G TR is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact form factor, making it suitable for integration into small-sized electronic devices.

Package and Quantity

The MT29F64G08CBHGBJ4-3RES:G TR is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Memory Type: NAND Flash
• Capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The MT29F64G08CBHGBJ4-3RES:G TR follows a standard pin configuration for NAND flash memory. The specific pinout may vary depending on the manufacturer. Here is a general representation of the pin configuration:

1. VCC 2. GND 3. Chip Enable (CE#) 4. Write Enable (WE#) 5. Output Enable (OE#) 6. Command Latch Enable (CLE) 7. Address Latch Enable (ALE) 8. Data Input/Output (DQ0) 9. Data Input/Output (DQ1) 10. Data Input/Output (DQ2) 11. Data Input/Output (DQ3) 12. Data Input/Output (DQ4) 13. Data Input/Output (DQ5) 14. Data Input/Output (DQ6) 15. Data Input/Output (DQ7) 16. Ready/Busy (RB#) 17. Erase/Program Pulse (E/P#) 18. Reset (RST#)

Functional Features

• High-speed data transfer: The MT29F64G08CBHGBJ4-3RES:G TR offers fast read and write speeds, allowing for efficient data access.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: This product utilizes wear-leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the NAND flash memory.
• Block management: The MT29F64G08CBHGBJ4-3RES:G TR employs block management techniques to optimize performance and enhance endurance.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited erase/program cycles compared to other non-volatile memory technologies
• Higher cost per gigabyte compared to traditional hard disk drives

Working Principles

The MT29F64G08CBHGBJ4-3RES:G TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information using a floating-gate transistor.

During write operations, the memory cells are programmed by applying electrical charges to the floating gates. Reading data involves detecting the charge level in each memory cell. The control circuitry manages the read, write, and erase operations, ensuring proper data storage and retrieval.

Detailed Application Field Plans

The MT29F64G08CBHGBJ4-3RES:G TR finds applications in various electronic devices that require high-capacity and reliable data storage. Some potential application fields include:

1. Smartphones and tablets: The NAND flash memory provides ample storage for apps, multimedia content, and user data.
2. Digital cameras: It enables storing high-resolution photos and videos captured by digital cameras.