MT29F64G08CBHGBJ4-3R:G TR

Product Overview

Category

MT29F64G08CBHGBJ4-3R:G TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CBHGBJ4-3R:G TR offers a storage capacity of 64 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced technology, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F64G08CBHGBJ4-3R:G TR is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact form factor, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Package and Quantity

The MT29F64G08CBHGBJ4-3R:G TR is typically packaged in a surface-mount technology (SMT) package. The exact package dimensions and specifications can be obtained from the manufacturer's datasheet. The quantity of units per package may vary depending on the supplier or customer requirements.

Specifications

• Storage Capacity: 64 GB
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The detailed pin configuration of the MT29F64G08CBHGBJ4-3R:G TR can be found in the manufacturer's datasheet. It typically includes pins for power supply, data input/output, control signals, and other necessary connections.

Functional Features

• Page-level random access: The NAND flash memory allows for random access at the page level, enabling efficient read and write operations.
• Error correction code (ECC): This product incorporates ECC algorithms to detect and correct errors that may occur during data transmission or storage, ensuring data reliability.
• Wear leveling: The MT29F64G08CBHGBJ4-3R:G TR employs wear leveling techniques to evenly distribute write and erase operations across memory blocks, extending the lifespan of the device.
• Bad block management: It includes mechanisms to identify and manage bad blocks, preventing them from being used for data storage.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption contributes to energy efficiency.
• Compact package facilitates integration into small-sized electronic devices.
• RoHS compliance promotes environmental friendliness.

Disadvantages

• Limited erase/program cycles compared to some other non-volatile memory technologies.
• Higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

The MT29F64G08CBHGBJ4-3R:G TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell consists of a floating-gate transistor that can store electrical charges representing binary data (0s and 1s). The data is accessed by applying appropriate voltage levels to the memory cells and reading the resulting electrical charges.

Detailed Application Field Plans

The MT29F64G08CBHGBJ4-3R:G TR finds applications in various electronic devices, including: - Smartphones and tablets for storing operating systems, applications, and user data. - Digital cameras for storing high-resolution photos and videos. - Solid-state drives (SSDs) for replacing traditional hard disk drives in computers, offering faster boot times and improved overall performance.

Alternative Models

There are several alternative models available in the market that offer similar functionality and specifications as the MT29F64G08CBHGBJ4-3R:G TR. Some notable alternatives include: - Model A: Offers a higher storage capacity of 128 GB. - Model B: Provides faster data transfer rates up to 600 MB/s. - Model C: Designed for industrial applications with extended temperature ranges.

These alternative models can be explored based on specific requirements and compatibility with the target application.

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