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MT29F64G08CBCGBJ4-5M:G
Product Overview
Category: Flash Memory
Use: Data storage and retrieval
Characteristics: High capacity, non-volatile, fast read/write speeds
Package: BGA (Ball Grid Array)
Essence: NAND flash memory
Packaging/Quantity: Individual units or reels
Specifications
- Model: MT29F64G08CBCGBJ4-5M:G
- Capacity: 64 gigabytes (GB)
- Interface: Parallel
- Voltage: 3.3V
- Access Time: 25 ns
- Operating Temperature: -40°C to +85°C
- Data Retention: Up to 10 years
- Endurance: Up to 100,000 program/erase cycles
Detailed Pin Configuration
The MT29F64G08CBCGBJ4-5M:G has a total of 48 pins arranged in a specific configuration. The pinout is as follows:
- VCC
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- A24
- A25
- ALE
- CLE
- RE#
- WE#
- WP#
- R/B#
- CE#
- BYTE#
- NC
- NC
- NC
- NC
- GND
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
Functional Features
- High-speed data transfer
- Reliable and durable storage solution
- Low power consumption
- Error correction capabilities
- Wear-leveling algorithms for extended lifespan
- Block erase and page program operations
Advantages and Disadvantages
Advantages: - Large storage capacity - Fast read/write speeds - Non-volatile memory (data retention even without power) - Compact package size - Suitable for various applications
Disadvantages: - Limited endurance (program/erase cycles) - Higher cost compared to other memory technologies - Requires specific interface and controller support
Working Principles
The MT29F64G08CBCGBJ4-5M:G is based on NAND flash memory technology. It stores data in a series of memory cells organized into blocks and pages. The memory cells use floating-gate transistors to trap electrons, representing binary data as charges. To write data, the memory cells are programmed by applying high voltages. Reading data involves sensing the charge levels in the memory cells.
Detailed Application Field Plans
The MT29F64G08CBCGBJ4-5M:G is widely used in various electronic devices and systems that require reliable and high-capacity data storage. Some common application fields include:
- Solid-state drives (SSDs)
- USB flash drives
- Embedded systems
- Industrial automation
- Automotive electronics
- Consumer electronics
Detailed and Complete Alternative Models
- MT29F64G08CBABA
- MT29F64G08CBACB
- MT29F64G08CBBCB
- MT29F64G08CBCCB
- MT29F64G08CBCDB
These alternative models offer similar specifications and functionality to the MT29F64G08CBCGBJ4-5M:G, providing options for different application requirements.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací MT29F64G08CBCGBJ4-5M:G v technických řešeních
1. What is the MT29F64G08CBCGBJ4-5M:G?
The MT29F64G08CBCGBJ4-5M:G is a specific model of NAND flash memory chip manufactured by Micron Technology.
2. What is the storage capacity of the MT29F64G08CBCGBJ4-5M:G?
The MT29F64G08CBCGBJ4-5M:G has a storage capacity of 64 gigabits (8 gigabytes).
3. What is the interface used for connecting the MT29F64G08CBCGBJ4-5M:G to a system?
The MT29F64G08CBCGBJ4-5M:G uses a standard NAND flash interface, such as ONFI (Open NAND Flash Interface) or Toggle Mode.
4. What are some common applications of the MT29F64G08CBCGBJ4-5M:G?
The MT29F64G08CBCGBJ4-5M:G is commonly used in various technical solutions, including solid-state drives (SSDs), embedded systems, industrial automation, and consumer electronics.
5. What is the operating voltage range of the MT29F64G08CBCGBJ4-5M:G?
The MT29F64G08CBCGBJ4-5M:G operates within a voltage range of 2.7V to 3.6V.
6. What is the maximum data transfer rate supported by the MT29F64G08CBCGBJ4-5M:G?
The MT29F64G08CBCGBJ4-5M:G supports a maximum data transfer rate of up to 400 megabytes per second.
7. Does the MT29F64G08CBCGBJ4-5M:G support error correction codes (ECC)?
Yes, the MT29F64G08CBCGBJ4-5M:G supports various ECC algorithms to ensure data integrity and reliability.
8. Can the MT29F64G08CBCGBJ4-5M:G be used in both commercial and industrial temperature ranges?
Yes, the MT29F64G08CBCGBJ4-5M:G is available in both commercial (0°C to 70°C) and industrial (-40°C to 85°C) temperature ranges.
9. What is the physical package of the MT29F64G08CBCGBJ4-5M:G?
The MT29F64G08CBCGBJ4-5M:G is packaged in a standard TSOP (Thin Small Outline Package) with 48 pins.
10. Is the MT29F64G08CBCGBJ4-5M:G backward compatible with previous generations of NAND flash memory?
Yes, the MT29F64G08CBCGBJ4-5M:G is designed to be backward compatible with previous generations of NAND flash memory, ensuring compatibility with existing systems and applications.