MT29F64G08CBCBBH1-10X:B

Product Overview

Category

MT29F64G08CBCBBH1-10X:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CBCBBH1-10X:B offers a storage capacity of 64 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, making it suitable for demanding applications.
• Low power consumption: The MT29F64G08CBCBBH1-10X:B is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This NAND flash memory comes in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F64G08CBCBBH1-10X:B is typically packaged in a small form factor, such as a surface-mount device (SMD) package. It is available in different quantities, ranging from individual units to bulk packaging for larger-scale production.

Specifications

• Storage Capacity: 64 GB
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: SMD
• Data Transfer Rate: Up to 400 megabits per second (Mbps)

Detailed Pin Configuration

The MT29F64G08CBCBBH1-10X:B has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. RE: Read Enable
5. WE: Write Enable
6. A0-A18: Address Inputs
7. DQ0-DQ15: Data Inputs/Outputs
8. R/B: Ready/Busy Status

Functional Features

• Page Program: Allows data to be written in page-sized increments, enhancing efficiency.
• Block Erase: Enables erasing of large blocks of data, facilitating efficient memory management.
• Read and Write Operations: Supports high-speed read and write operations for quick data access.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: Implements wear-leveling techniques to distribute data evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern data-intensive applications.
• Fast data transfer rate enhances overall system performance.
• Reliable performance ensures data integrity and longevity.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• Relatively higher cost compared to other types of memory technologies.
• Limited endurance due to the finite number of program/erase cycles.
• Susceptible to data loss if not properly managed or protected against external factors such as power surges or physical damage.

Working Principles

The MT29F64G08CBCBBH1-10X:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge applied to it. When reading data, the charge level of each cell is measured to determine the stored information. Writing data involves applying specific voltage levels to program the cells with the desired charge. Erasing data is achieved by resetting the charge level of entire memory blocks.

Detailed Application Field Plans

The MT29F64G08CBCBBH1-10X:B finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems - Embedded systems

Detailed and Complete Alternative Models

• MT29F64G08CBABA: Similar specifications and features, but with a different package type.
• MT29F64G08CBACD: Higher storage capacity (128 GB) with similar characteristics and functionality.
• MT29F64G08CBBCD: Lower storage capacity (32 GB) with similar characteristics and functionality.

These alternative models provide options for different storage requirements and package preferences while maintaining similar performance and functionality.

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