MT29F64G08CBABBWPR:B

Product Overview

Category

MT29F64G08CBABBWPR:B belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08CBABBWPR:B offers a storage capacity of 64 gigabytes.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
• Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
• Compact package: The product comes in a small form factor, enabling easy integration into different devices.

Package and Quantity

MT29F64G08CBABBWPR:B is typically packaged in a surface-mount package (SMP) or ball grid array (BGA) package. The quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 gigabytes
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The detailed pin configuration for MT29F64G08CBABBWPR:B can be found in the product datasheet provided by the manufacturer.

Functional Features

• Page Read and Program Operations: Allows reading and programming of data at the page level.
• Block Erase Operation: Enables erasing of data at the block level.
• Wear-Leveling Algorithm: Distributes write operations evenly across memory blocks, extending the lifespan of the NAND flash memory.
• Error Correction Code (ECC): Provides error detection and correction capabilities to ensure data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into various electronic devices.
• Reliable performance ensures data durability and longevity.

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory.
• Higher cost compared to other types of memory technologies.
• Susceptible to data loss in case of power failure during write operations.

Working Principles

MT29F64G08CBABBWPR:B utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the charge level in each memory cell is measured to determine the stored information.

Detailed Application Field Plans

MT29F64G08CBABBWPR:B finds applications in various electronic devices, including: 1. Smartphones and tablets: Provides high-capacity storage for apps, media files, and user data. 2. Digital cameras: Enables storing large numbers of high-resolution photos and videos. 3. Solid-state drives (SSDs): Serves as primary storage for computers, offering fast boot times and data access.

Alternative Models

Several alternative models with similar specifications and features are available from different manufacturers. Some notable alternatives include: - Samsung K9K8G08U0B - Toshiba TH58NVG6D2FLA89 - Micron MT29F64G08CBABA

These alternative models can be considered based on specific requirements and compatibility with the target device.

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