MT29F64G08CBABAWP-M:B

Product Overview

Category

MT29F64G08CBABAWP-M:B belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08CBABAWP-M:B offers a storage capacity of 64 gigabits (8 gigabytes).
• Non-volatile memory: The data stored in this flash memory is retained even when power is disconnected.
• Fast read and write speeds: It provides high-speed data transfer rates, allowing for quick access to stored information.
• Compact package: The MT29F64G08CBABAWP-M:B is available in a small form factor, making it suitable for space-constrained applications.
• Reliable performance: This flash memory is designed to withstand frequent read/write operations and has a long lifespan.

Package and Quantity

The MT29F64G08CBABAWP-M:B is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is usually sold in quantities of one or more, depending on the customer's requirements.

Specifications

• Storage Capacity: 64 gigabits (8 gigabytes)
• Interface: NAND Flash interface
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The detailed pin configuration of MT29F64G08CBABAWP-M:B can be found in the datasheet provided by the manufacturer. It typically includes pins for power supply, data input/output, control signals, and other necessary connections.

Functional Features

• Page Program: Allows data to be written into the memory in page-sized increments.
• Block Erase: Enables erasing of a block of data, improving efficiency when updating or deleting information.
• Read/Write Operations: Provides fast read and write speeds, facilitating quick access to stored data.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: Distributes write operations evenly across the memory cells, extending the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast read and write speeds enable quick data access.
• Non-volatile memory retains data even without power.
• Compact package size suits space-constrained applications.
• Reliable performance ensures long-term usability.

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory.
• Higher cost compared to other types of memory technologies.
• Susceptible to physical damage if mishandled.

Working Principles

MT29F64G08CBABAWP-M:B utilizes NAND flash memory technology. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data using a floating-gate transistor. The data is written by applying appropriate voltages to the memory cells, and it can be read by detecting the voltage levels stored in the cells.

Detailed Application Field Plans

The MT29F64G08CBABAWP-M:B is widely used in various electronic devices that require high-capacity data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Utilized for storing photos and videos captured by the camera.
3. Solid-state drives (SSDs): Employed as primary storage in computers and laptops, providing fast boot times and data access.

Detailed Alternative Models

There are several alternative models available in the market that offer similar functionality to MT29F64G08CBABAWP-M:B. Some notable alternatives include:

1. Samsung K9K8G08U0B: Offers a storage capacity of 8 gigabytes and similar performance characteristics.
2. Toshiba THGBM5G6A2JBAIR: Provides a storage capacity of 64 gigabits and comparable read/write speeds.
3. Micron MT29F64G08CBACAWP-IT: Similar to MT29F64G08CBABAWP-M:B in terms of specifications and features.

These alternative models can be considered based on specific requirements and compatibility with the target application.

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