MT29F64G08AECDBJ4-6IT:D

Product Overview

Category

MT29F64G08AECDBJ4-6IT:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08AECDBJ4-6IT:D offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F64G08AECDBJ4-6IT:D comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F64G08AECDBJ4-6IT:D NAND flash memory is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: Surface Mount Device (SMD)
• Package Dimensions: [Insert dimensions here]

Detailed Pin Configuration

The MT29F64G08AECDBJ4-6IT:D NAND flash memory has a specific pin configuration that enables its proper functioning within a circuit. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ7: Data input/output lines
8. R/B: Ready/Busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• High-speed data transfer: MT29F64G08AECDBJ4-6IT:D offers fast read and write speeds, facilitating efficient data storage and retrieval.
• Error correction: The NAND flash memory incorporates error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: This feature evenly distributes data writes across the memory cells, extending the product's lifespan.
• Bad block management: The device automatically detects and manages bad blocks, enhancing overall performance and longevity.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other storage technologies like hard disk drives (HDDs).

Working Principles

MT29F64G08AECDBJ4-6IT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells store information by trapping electrons within a floating gate, representing binary values (0 or 1). The presence or absence of charge in the floating gate determines the stored data.

During read operations, the controller sends appropriate signals to access specific memory cells and retrieve the stored data. Write operations involve applying high voltages to the selected cells, allowing electrons to tunnel through the insulating layer and modify the charge in the floating gate.

Detailed Application Field Plans

MT29F64G08AECDBJ4-6IT:D finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F64G08CBABA: Similar NAND flash memory with a different package type.
2. MT29F64G08CBACD: Alternative model with higher storage capacity (128 GB).
3. MT29F64G08CBADW: Alternative model with extended temperature range (-40°C to +105°C).

These alternative models offer similar functionality and can be considered as substitutes for MT29F64G08AECDBJ4-6IT:D, depending on specific requirements and compatibility considerations.

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