MT29F512G08CMCEBJ4-37ITRES:E TR

Product Overview

Category

MT29F512G08CMCEBJ4-37ITRES:E TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08CMCEBJ4-37ITRES:E TR offers a storage capacity of 512 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced technology, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F512G08CMCEBJ4-37ITRES:E TR is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F512G08CMCEBJ4-37ITRES:E TR is typically packaged in a surface-mount package (SMT) or ball grid array (BGA) package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Model: MT29F512G08CMCEBJ4-37ITRES:E TR
• Storage Capacity: 512 GB
• Interface: NAND Flash
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: SMT/BGA
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Endurance: Up to 3,000 program/erase cycles

Detailed Pin Configuration

The MT29F512G08CMCEBJ4-37ITRES:E TR has a pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. R/B: Ready/busy status
9. WP: Write protect
10. CLE: Command latch enable
11. ALE: Address latch enable

Functional Features

• Page-level random access: The NAND flash memory allows for random access at the page level, enabling efficient data retrieval and modification.
• Error correction code (ECC): It incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear leveling: The product employs wear leveling techniques to distribute write operations evenly across memory blocks, extending the lifespan of the device.
• Bad block management: It includes mechanisms to manage and isolate defective blocks, preventing data loss and maintaining overall performance.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Relatively higher cost compared to lower-capacity NAND flash memory options
• Limited endurance compared to other non-volatile memory technologies

Working Principles

The MT29F512G08CMCEBJ4-37ITRES:E TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on the floating gate. When reading or writing data, the controller sends commands and addresses to access specific memory locations.

During a write operation, the controller applies a voltage to the selected memory cells, altering the charge on the floating gate and storing the desired data. Reading involves sensing the electrical state of the memory cells to retrieve the stored information.

Detailed Application Field Plans

The MT29F512G08CMCEBJ4-37ITRES:E TR is widely used in various electronic devices that require high-capacity data storage. Some application fields include:

1. Smartphones and tablets: The NAND flash memory provides ample storage for apps, media files, and user data.
2. Digital cameras: It allows for storing high-resolution photos and videos.
3. Solid-state drives (SSDs): The product serves as the primary storage medium in SSDs, offering fast and reliable data access.

Detailed and Complete Alternative Models

1. MT29F256G08CJBBH6-12ITZ:C - 256 GB NAND flash memory with a different package type.
2. MT29F1T08EMDHCJ4-12ITX:A - 1 terabyte (TB) NAND flash memory with enhanced performance features.
3. MT29F