MT29F512G08CFCBBWP-10M:B

Product Overview

Category

MT29F512G08CFCBBWP-10M:B belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08CFCBBWP-10M:B offers a storage capacity of 512 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
• Low power consumption: The product is designed to consume minimal power, making it suitable for portable devices.
• Compact package: The MT29F512G08CFCBBWP-10M:B comes in a compact form factor, enabling easy integration into various devices.

Package and Quantity

The MT29F512G08CFCBBWP-10M:B is packaged in a small surface-mount package. The exact package dimensions and quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Model: MT29F512G08CFCBBWP-10M:B
• Storage Capacity: 512 GB
• Interface: NAND Flash
• Operating Voltage: 3.3V
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount
• Package Dimensions: [Insert dimensions]
• Manufacturer: [Insert manufacturer name]

Pin Configuration

The detailed pin configuration for MT29F512G08CFCBBWP-10M:B can be found in the product datasheet provided by the manufacturer. Please refer to the datasheet for accurate and up-to-date information.

Functional Features

• High-speed data access: The MT29F512G08CFCBBWP-10M:B offers fast read and write operations, allowing for efficient data access.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: The product utilizes wear-leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the NAND flash memory.
• Bad block management: It includes a bad block management system that identifies and manages defective blocks, ensuring optimal performance.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Higher cost compared to lower-capacity alternatives
• Limited endurance (compared to other types of non-volatile memory)

Working Principles

The MT29F512G08CFCBBWP-10M:B operates based on the principles of NAND flash memory technology. It uses a grid of memory cells, where each cell stores multiple bits of data. These cells are organized into pages and blocks, allowing for efficient reading and writing of data. When data is written, it is stored by applying electrical charges to the memory cells. To read the data, the charges are detected and converted back into digital information.

Detailed Application Field Plans

The MT29F512G08CFCBBWP-10M:B can be used in various applications, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive electronics - Industrial control systems

Detailed Alternative Models

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• Model 3: [Insert alternative model name]

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Please note that the above alternative models are provided for reference purposes only. It is recommended to consult the manufacturer's specifications for detailed information on alternative models.

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